Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films

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	Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films
	Zhao, K ; Feng, JF ; He, M ; Lu, HB ; Jin, KJ ; Zhou, YL ; Yang, GZ
刊名	JOURNAL OF RARE EARTHS
	2008
卷号	26 期号:4 页码:567
关键词	GIANT MAGNETORESISTANCE METAL TRANSITION BEHAVIOR ELECTRORESISTANCE TRANSPORT
ISSN号	1002-0721
通讯作者	Zhao, K: China Univ Petr, Dept Math & Phys, Beijing 102249, Peoples R China.
中文摘要	The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.
收录类别	SCI
资助信息	National Basic Research Program of China; National Natural Science Foundation of China; Key Project of Chinese Ministry of Education and Beijing Natural Science Foundation
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/35596]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhao, K,Feng, JF,He, M,et al. Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films[J]. JOURNAL OF RARE EARTHS,2008,26(4):567.
APA	Zhao, K.,Feng, JF.,He, M.,Lu, HB.,Jin, KJ.,...&Yang, GZ.(2008).Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films.JOURNAL OF RARE EARTHS,26(4),567.
MLA	Zhao, K,et al."Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films".JOURNAL OF RARE EARTHS 26.4(2008):567.