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Controlled oxidative functionalization of monolayer graphene by water-vapor plasma etching
Liu, L ; Xie, DL ; Wu, MH ; Yang, XX ; Xu, Z ; Wang, WL ; Bai, XD ; Wang, EG
刊名CARBON
2012
卷号50期号:8页码:3039
关键词FILMS OXIDE
ISSN号0008-6223
通讯作者Wang, WL: Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要We report studies on the controlled step-by-step oxidative functionalization of monolayer graphene by chemically reactive water-vapor plasma dry etching. The use of a porous mask on top of the graphene sheets as a filter is essential to reduce the density of free radicals and weaken the sputtering effect. Micro-Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy showed that the oxidation occurred in a mild and controllable way, and that a wide variety of oxygen-containing functional groups can be evenly and incrementally incorporated onto the carbon lattice. By monitoring the electrical property changes in the graphene at different levels of oxidation, we observed a transformation of the electrical conduction process from continuum percolation to variable range hopping and/or electric-field-driven tunneling, due to the progressive increase of sp(3)-based basal plane distortion that disrupts the transport of carriers delocalized in the sp(2) carbon network. (C) 2012 Elsevier Ltd. All rights reserved.
收录类别SCI
资助信息NSF [10874218, 50725209, 91021007, 20973195]; MOST [2009DFA01290]; CAS of China [KJCX2-YW-M13, KJCX2-YW-W35]
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/35143]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Liu, L,Xie, DL,Wu, MH,et al. Controlled oxidative functionalization of monolayer graphene by water-vapor plasma etching[J]. CARBON,2012,50(8):3039.
APA Liu, L.,Xie, DL.,Wu, MH.,Yang, XX.,Xu, Z.,...&Wang, EG.(2012).Controlled oxidative functionalization of monolayer graphene by water-vapor plasma etching.CARBON,50(8),3039.
MLA Liu, L,et al."Controlled oxidative functionalization of monolayer graphene by water-vapor plasma etching".CARBON 50.8(2012):3039.
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