Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells | |
Hao, HY ; Kong, GL ; Zeng, XB ; Xu, Y ; Diao, HW ; Liao, XB | |
刊名 | ACTA PHYSICA SINICA |
2005 | |
卷号 | 54期号:7页码:3370 |
关键词 | MICROCRYSTALLINE SILICON |
ISSN号 | 1000-3290 |
通讯作者 | Hao, HY: Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China. |
中文摘要 | Based on our experimental research on diphasic silicon films, the parameters such as absorption coefficient, mobility lifetime product and bandgap were estimated by means of effective-medium theory. And then computer simulation of a-Si: H/mu c-Si: H diphasic thin film solar cells was performed. It was shown that the more crystalline fraction in the diphasic silicon films, the higher short circuit density, the lower open-circuit voltage and the lower efficiency. From the spectral response, we can see that the response in long wave region was improved significantly with increasing crystalline fraction in the silicon films. Taking Lambertian back refraction into account, the diphasic silicon films with 40%-50% crystalline fraction was considered to be the best intrinsic layer for the bottom solar cell in micromorph tandem. |
收录类别 | SCI |
语种 | 中文 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/35021] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Hao, HY,Kong, GL,Zeng, XB,et al. Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells[J]. ACTA PHYSICA SINICA,2005,54(7):3370. |
APA | Hao, HY,Kong, GL,Zeng, XB,Xu, Y,Diao, HW,&Liao, XB.(2005).Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells.ACTA PHYSICA SINICA,54(7),3370. |
MLA | Hao, HY,et al."Computer simulation of a-Si : H/mu c-Si : H diphasic silicon solar cells".ACTA PHYSICA SINICA 54.7(2005):3370. |
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