Characterization of diphasic nc-Si/a-Si : H thin films and solar cells

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	Characterization of diphasic nc-Si/a-Si : H thin films and solar cells
	Zhang, SB ; Xu, YY ; Hu, ZH ; Wang, YQ ; Zeng, XB ; Diao, HW ; Wang, WJ ; Kong, GL ; Liao, XB
刊名	CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002
	2002
页码	1182
关键词	SILICON RAMAN
通讯作者	Zhang, SB: Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China.
中文摘要	Hydrogenated silicon films with diphasic structure have been prepared by using a new regime of plasma enhanced chemical vapor deposition (PECVD) in the region adjacent to the phase transition from amorphous to crystal. line state. The photoelectronic and microstructural properties of the films have been characterized by the constant photocurrent method (CPM), Raman scattering and nuclear magnetic resonance (NMR). In comparison with typical hydrogenated amorphous silicon (a-Si:H), these diphasic films with a crystalline fraction less than 0.3 show a similar optical absorption coefficient, lower deep-defect densities and higher stability upon light soaking. By using the diphasic nc-Si/a-Si films a p-i-n junction solar cell has been prepared With an initial efficiency of 8.51 % and a stabilized efficiency of 8.02 % on an area of 0.126 cm(2) (AM1.5, 100 mW/cm(2)).
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34633]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, SB,Xu, YY,Hu, ZH,et al. Characterization of diphasic nc-Si/a-Si : H thin films and solar cells[J]. CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002,2002:1182.
APA	Zhang, SB.,Xu, YY.,Hu, ZH.,Wang, YQ.,Zeng, XB.,...&Liao, XB.(2002).Characterization of diphasic nc-Si/a-Si : H thin films and solar cells.CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002,1182.
MLA	Zhang, SB,et al."Characterization of diphasic nc-Si/a-Si : H thin films and solar cells".CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 (2002):1182.