Characterization of Ba0.1Sr0.9TiO3/YBa2Cu3O7-delta heterostructures on vicinal LaAlO3 substrates

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	Characterization of Ba0.1Sr0.9TiO3/YBa2Cu3O7-delta heterostructures on vicinal LaAlO3 substrates
	Peng, W ; Hu, WF ; Wang, TS ; Zhao, XJ ; Zhu, XH ; Qi, HH ; Lei, C ; Chen, YF ; Zheng, DN ; Li, L
刊名	JOURNAL OF CRYSTAL GROWTH
	2003
卷号	252 期号:1-3 页码:302
关键词	BA0.5SR0.5TIO3 THIN-FILMS YBA2CU3O7-DELTA FILMS GROWTH SRTIO3(001) MICROSCOPY CAPACITORS LAYER
ISSN号	0022-0248
通讯作者	Peng, W: Chinese Acad Sci, Natl Lab Superconduct, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Hexagonal GaN (H-GaN) films have been grown on GaAs(0 0 1) substrates with AlAs buffer layers in a molecular beam epitaxy system. Transmission electron microscopy observations show the tilt of the sub-grains of H-GaN film with respect to the substrate. Such mis-orientation is derived from the steps on AlAs surface due to nitridation. Atomic force microscopy observations show a large density of pinholes on the surface of GaN film grown this way. But when an AlN buffer layer is applied, on AlAs/GaAs(0 0 1) substrate, the quality of the GaN film can be much improved with the elimination of mis-orientation and pinholes. (C) 2003 Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34622]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Peng, W,Hu, WF,Wang, TS,et al. Characterization of Ba0.1Sr0.9TiO3/YBa2Cu3O7-delta heterostructures on vicinal LaAlO3 substrates[J]. JOURNAL OF CRYSTAL GROWTH,2003,252(1-3):302.
APA	Peng, W.,Hu, WF.,Wang, TS.,Zhao, XJ.,Zhu, XH.,...&Li, L.(2003).Characterization of Ba0.1Sr0.9TiO3/YBa2Cu3O7-delta heterostructures on vicinal LaAlO3 substrates.JOURNAL OF CRYSTAL GROWTH,252(1-3),302.
MLA	Peng, W,et al."Characterization of Ba0.1Sr0.9TiO3/YBa2Cu3O7-delta heterostructures on vicinal LaAlO3 substrates".JOURNAL OF CRYSTAL GROWTH 252.1-3(2003):302.