Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions

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	Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions
	Feng, JF ; Feng, G ; Ma, QL ; Han, XF ; Coey, JMD
刊名	JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
	2009
卷号	321 期号:19 页码:3046
关键词	ROOM-TEMPERATURE TMR
ISSN号	0304-8853
通讯作者	Feng, JF: Trinity Coll Dublin, Sch Phys, Dublin, Ireland.
中文摘要	MgO-based magnetic tunnel junctions (MTJs) with a layer sequence Ir(22)Mn(78) or Fe(50)Mn(50) (10 nm)/CoFe (2 nm)/Ru (0.85 nm)/CoFeB (0.5 <= t < 2 nm)/MgO (2.5 nm)/CoFeB (3 nm) have been fabricated. The bias voltage dependence of tunneling magnetoresistance (TMR) is given as a function of the annealing temperature for these MTJs, which shows the TMR ratio changes its sign from inverted to normal at a critical bias voltage (V(C)) when an unbalaned synthetic antiferromagnetic stack CoFe/Ru/CoFeB is used. V(C)s change with the thickness of the pinned CoFeB and annealing temperature, which implies one can achieve different VC(s) by artificial control. The asymmetric V(C) values suggest that a strong density-of-states modification occurs at bottom oxide/ferromagnet interface. (C) 2009 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34220]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Feng, JF,Feng, G,Ma, QL,et al. Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions[J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,2009,321(19):3046.
APA	Feng, JF,Feng, G,Ma, QL,Han, XF,&Coey, JMD.(2009).Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions.JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS,321(19),3046.
MLA	Feng, JF,et al."Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions".JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS 321.19(2009):3046.