Auger electron spectroscopy sputter depth profiling technique for binary solids

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	Auger electron spectroscopy sputter depth profiling technique for binary solids
	Cao, ZX
刊名	SURFACE SCIENCE
	2000
卷号	452 期号:1-3 页码:220
关键词	ALLOYS
ISSN号	0039-6028
通讯作者	Cao, ZX: Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	In this work the Auger electron spectroscopy (AES) sputter depth profiling technique for binary solids has been discussed and exemplified by its application to reveal composition profiles generated in Ni(0.7)Mo(0.3) by pre-bombardment with Ar(+)-ions of 1 through 5 keV. Two element-specific. surface-sensitive Auger transitions are employed to monitor the surface composition. The Linear correlation between the Auger intensities provides the relative sensitivity factor for the quantification of AES data. A model proposed by Ho and co-workers is reformulated for the conversion of the measured temporal variation of surface concentration C(s)(t) into the original composition profile C(x). Radiation-enhanced diffusion caused by high-energy ion bombardment turns sputter depth profiling into an underdetermined inverse problem. On the other hand, experiments show that the strong preferential sputtering effect accompanying low-energy sputter may veil the detail of the composition profiles. An intermediate energy between about 100 and 300 eV is found to be optimum for the purpose of sputter depth profiling. (C) 2000 published by Elsevier Science B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34073]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Cao, ZX. Auger electron spectroscopy sputter depth profiling technique for binary solids[J]. SURFACE SCIENCE,2000,452(1-3):220.
APA	Cao, ZX.(2000).Auger electron spectroscopy sputter depth profiling technique for binary solids.SURFACE SCIENCE,452(1-3),220.
MLA	Cao, ZX."Auger electron spectroscopy sputter depth profiling technique for binary solids".SURFACE SCIENCE 452.1-3(2000):220.