Atomically smooth ultrathin films of topological insulator Sb2Te3

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	Atomically smooth ultrathin films of topological insulator Sb2Te3
	Wang, GA ; Zhu, XG ; Wen, J ; Chen, X ; He, K ; Wang, LL ; Ma, XC ; Liu, Y ; Dai, X ; Fang, Z ; Jia, JF ; Xue, QK
刊名	NANO RESEARCH
	2010
卷号	3 期号:12 页码:874
关键词	SINGLE DIRAC CONE BI2TE3 CRYSTALS SURFACE-STATES DOPED SB2TE3 THIN-FILMS TRANSPORT DEFECTS BI2SE3 GROWTH LIMIT
ISSN号	1998-0124
通讯作者	Jia, JF: Tsinghua Univ, Dept Phys, Key Lab Atom Mol & Nanosci, Beijing 100084, Peoples R China.
中文摘要	The growth and characterization of single-crystalline thin films of topological insulators (TIs) is an important step towards their possible applications. Using in situ scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES), we show that moderately thick Sb2Te3 films grown layer-by-layer by molecular beam epitaxy (MBE) on Si(111) are atomically smooth, single-crystalline, and intrinsically insulating. Furthermore, these films were found to exhibit a robust TI electronic structure with their Fermi energy lying within the energy gap of the bulk that intersects only the Dirac cone of the surface states. Depositing Cs in situ moves the Fermi energy of the Sb2Te3 films without changing the electronic band structure, as predicted by theory. We found that the TI behavior is preserved in Sb2Te3 films down to five quintuple layers (QLs).
收录类别	SCI
资助信息	National Natural Science Foundation of China (NSFC); Ministry of Science and Technology of China (MOST); National Science Foundation (NSF) [DMR 0908700]
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34047]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, GA,Zhu, XG,Wen, J,et al. Atomically smooth ultrathin films of topological insulator Sb2Te3[J]. NANO RESEARCH,2010,3(12):874.
APA	Wang, GA.,Zhu, XG.,Wen, J.,Chen, X.,He, K.,...&Xue, QK.(2010).Atomically smooth ultrathin films of topological insulator Sb2Te3.NANO RESEARCH,3(12),874.
MLA	Wang, GA,et al."Atomically smooth ultrathin films of topological insulator Sb2Te3".NANO RESEARCH 3.12(2010):874.