Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface

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	Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface
	Wang, LL ; Ma, XC ; Ning, YX ; Ji, SH ; Fu, YS ; Jia, JF ; Kelly, KF ; Xue, QK
刊名	APPLIED PHYSICS LETTERS
	2009
卷号	94 期号:15
关键词	GROWTH PHASE
ISSN号	0003-6951
通讯作者	Wang, LL: Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Surface structure of the Sn islands 5 ML high, prepared on Si(111)-(2 root 3X2 root 3)-Sn substrate, is investigated by low temperature scanning tunneling microscopy/spectroscopy. Due to the elastic strain relaxation in the islands, the in-plane unit cell structure distorts and the apparent height of the surface atoms varies regularly to form an overall modulated strip structure. The quantum well states are observed to depend on the relative position within this structure, which implies the change of the surface chemical potential induced by the elastic strain relaxation as well.
收录类别	SCI
资助信息	National Science Foundation and Ministry of Science and Technology of China
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/34042]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, LL,Ma, XC,Ning, YX,et al. Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface[J]. APPLIED PHYSICS LETTERS,2009,94(15).
APA	Wang, LL.,Ma, XC.,Ning, YX.,Ji, SH.,Fu, YS.,...&Xue, QK.(2009).Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface.APPLIED PHYSICS LETTERS,94(15).
MLA	Wang, LL,et al."Atomic scale study of strain relaxation in Sn islands on Sn-induced Si(111)-(2 root 3x2 root 3) surface".APPLIED PHYSICS LETTERS 94.15(2009).