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Atmospheric pressure chemical vapour deposition synthesis of sulfides, oxides, silicides and metal nanowires with metal chloride precursors
Zhang, HX ; Ge, JP ; Wang, J ; Li, YD
刊名NANOTECHNOLOGY
2006
卷号17期号:11页码:S253
关键词ONE-DIMENSIONAL NANOSTRUCTURES ALIGNED CARBON NANOTUBES SEMICONDUCTOR NANOWIRES HIGH-TEMPERATURE LASER-ABLATION ZINC SILICATE GERMANIUM NANOWIRES ASSISTED GROWTH FIELD-EMISSION ARRAYS
ISSN号0957-4484
通讯作者Li, YD: Tsing Hua Univ, Natl Ctr Nanosci & Nanotechnol, Minist Educ, Key Lab Atom & Mol Nanosci,Dept Chem, Beijing 100084, Peoples R China.
中文摘要This account briefly summarizes our research on the synthesis of nanocrystals of a host of materials from metal chloride precursors via atmospheric pressure chemical vapour deposition (APCVD). Successful synthesis of nanocrystals of various sulfides, oxides, silicides, and metals, demonstrates metal chlorides as useful precursors for nanoscience and nanotechnology. Oxide-assisted growth (OAG) is found to dominate the formation of a lot of metal sulfide nanowire/nanosheets. Our hypotheses of geometrically kinetic competition for the interaction between the silica sheath and the inner core materials ( hexagonal Fe7S8 and face-centred cubic Cu7.2S4) have fairly well explained the phenomena of silica vapour pressure-dependent growth of the sulfide crystals. But experimental results for some sulfides call for ab initio analysis to determine its effective region associated with torsions.
收录类别SCI
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/34012]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhang, HX,Ge, JP,Wang, J,et al. Atmospheric pressure chemical vapour deposition synthesis of sulfides, oxides, silicides and metal nanowires with metal chloride precursors[J]. NANOTECHNOLOGY,2006,17(11):S253.
APA Zhang, HX,Ge, JP,Wang, J,&Li, YD.(2006).Atmospheric pressure chemical vapour deposition synthesis of sulfides, oxides, silicides and metal nanowires with metal chloride precursors.NANOTECHNOLOGY,17(11),S253.
MLA Zhang, HX,et al."Atmospheric pressure chemical vapour deposition synthesis of sulfides, oxides, silicides and metal nanowires with metal chloride precursors".NANOTECHNOLOGY 17.11(2006):S253.
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