APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES

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	APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES
	PENG, LM ; JIANG, J ; DU, AY ; ZHOU, JX
刊名	JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
	1992
卷号	10 期号:5 页码:2293
关键词	SUPERLATTICE
ISSN号	1071-1023
通讯作者	PENG, LM: UNIV OXFORD,DEPT MAT,PARKS RD,OXFORD OX1 3PH,ENGLAND.
中文摘要	Reflection electron microscopy (REM) has been applied, for the first time, to study the cross-sectional structures of multilayer semiconductor devices. An example is given of a GaAs/AlxGa1-xAs multiple quantum wells infrared detector. The technique was used during the device fabrication process as an in-line monitoring method to provide a direct and precise dimensional measurement of a fabricated mesa so as to reach an optimum fabrication condition. The REM results are compared with those deduced from electrical measurements of the fabricated devices and a complete consistency is obtained.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/33933]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	PENG, LM,JIANG, J,DU, AY,et al. APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1992,10(5):2293.
APA	PENG, LM,JIANG, J,DU, AY,&ZHOU, JX.(1992).APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,10(5),2293.
MLA	PENG, LM,et al."APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 10.5(1992):2293.