APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES | |
PENG, LM ; JIANG, J ; DU, AY ; ZHOU, JX | |
刊名 | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
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1992 | |
卷号 | 10期号:5页码:2293 |
关键词 | SUPERLATTICE |
ISSN号 | 1071-1023 |
通讯作者 | PENG, LM: UNIV OXFORD,DEPT MAT,PARKS RD,OXFORD OX1 3PH,ENGLAND. |
中文摘要 | Reflection electron microscopy (REM) has been applied, for the first time, to study the cross-sectional structures of multilayer semiconductor devices. An example is given of a GaAs/AlxGa1-xAs multiple quantum wells infrared detector. The technique was used during the device fabrication process as an in-line monitoring method to provide a direct and precise dimensional measurement of a fabricated mesa so as to reach an optimum fabrication condition. The REM results are compared with those deduced from electrical measurements of the fabricated devices and a complete consistency is obtained. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-17 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/33933] ![]() |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | PENG, LM,JIANG, J,DU, AY,et al. APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,1992,10(5):2293. |
APA | PENG, LM,JIANG, J,DU, AY,&ZHOU, JX.(1992).APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,10(5),2293. |
MLA | PENG, LM,et al."APPLICATION OF REFLECTION ELECTRON-MICROSCOPY IN CROSS-SECTIONAL STUDY OF MULTILAYER SEMICONDUCTOR-DEVICES".JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 10.5(1992):2293. |
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