Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure

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	Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure
	Zeng, CH(曾春红); Zhang, BS(张宝顺); Cai, Y(蔡勇)
刊名	IEEE ELECTRON DEVICE LETTERS
	2013-02
卷号	34 期号:2 页码:217-219
关键词	AlGaN/GaN high-electron-mobility transistor (HEMT) dynamic performance power device
通讯作者	Yu, GH(于国浩)
英文摘要	Anovel double-gate AlGaN/GaN HEMT, in which an additional top-gate covers the adjacent regions of a normal gate, was proposed and fabricated for the first time to compare the dynamic characteristics of AlGaN/GaN HEMTs with a source field plate (SFP) and a gate field plate (GFP). During the dynamic characterization, the device was configured in two operation modes: One is the SFP mode with the top gate biased at 0 V, and the other is the GFP mode applying the gate pulse signal on the top gate at the same time. Compared with an AlGaN/GaN HEMT without field plates, both GFP and SFP much improve the dynamic performances. Compared with the SFP, the GFP shows better dynamic performances with a similar to 34% reduction of switch-on delay time and similar to 6% reduction of dynamic ON-state resistance. Studying the dynamic characteristics and applying negative voltage on the top gate during the OFF state, the mechanism differences between the GFP and the SFP are discussed in detail.
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000314173200023
公开日期	2014-01-13
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1338]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Zeng, CH,Zhang, BS,Cai, Y. Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure[J]. IEEE ELECTRON DEVICE LETTERS,2013,34(2):217-219.
APA	Zeng, CH,Zhang, BS,&Cai, Y.(2013).Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure.IEEE ELECTRON DEVICE LETTERS,34(2),217-219.
MLA	Zeng, CH,et al."Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure".IEEE ELECTRON DEVICE LETTERS 34.2(2013):217-219.