Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films

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	Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films
	Yang, H(杨辉); Fu, K(付凯); Zhang, BS(张宝顺); Wang, RX(王荣新); Zhang, XD(张晓东)
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2013-06-25
卷号	566 期号:0 页码:201-205
关键词	Oxide material Thin film Optical materials Semiconductor
通讯作者	Wang, RX(王荣新)
英文摘要	Ultraviolet (UV) photodetectors were prepared by using the GaOx + ZnO mixture phase thin films sputtered on sapphire as the photoresponse layer. The devices show good photoresponse in UV range. More interestingly, the device responsivity in the wavelength less than 280 nm range rapidly increases with increasing the applied voltage and becomes dominant for the bias >= 3.0 V. X-ray diffraction, absorption and cathodoluminescence measurements firmly reveal the mixture phases in the thin films. Electric field dependent detrapping of photo-excited carriers in nanocrystals in the films shall be responsible for the observed bias-voltage dependent deep UV photoresponse of the devices.
收录类别	SCI
语种	英语
WOS记录号	WOS:000317817200034
公开日期	2014-01-08
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1261]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
通讯作者	Wang, RX(王荣新)
推荐引用方式 GB/T 7714	Yang, H,Fu, K,Zhang, BS,et al. Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2013,566(0):201-205.
APA	Yang, H,Fu, K,Zhang, BS,Wang, RX,&Zhang, XD.(2013).Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films.JOURNAL OF ALLOYS AND COMPOUNDS,566(0),201-205.
MLA	Yang, H,et al."Bias-voltage dependent ultraviolet photodetectors prepared by GaOx + ZnO mixture phase nanocrystalline thin films".JOURNAL OF ALLOYS AND COMPOUNDS 566.0(2013):201-205.