Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor

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	Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor
	M. H. Wang ; H. Lei ; Y. Seki ; S. Seki ; Y. Sawada ; Y. Hoshi ; S. H. Wang ; L. X. Sun
刊名	Journal of Thermal Analysis and Calorimetry
	2013
卷号	111 期号:2 页码:1457-1461
关键词	Partly crystallized amorphous IO film Water vapor Thermal crystallization kinetic Electrical properties tin-oxide microstructures
ISSN号	1388-6150
原文出处	://WOS:000313409700058
语种	英语
公开日期	2013-12-24
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/71545]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	M. H. Wang,H. Lei,Y. Seki,et al. Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor[J]. Journal of Thermal Analysis and Calorimetry,2013,111(2):1457-1461.
APA	M. H. Wang.,H. Lei.,Y. Seki.,S. Seki.,Y. Sawada.,...&L. X. Sun.(2013).Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor.Journal of Thermal Analysis and Calorimetry,111(2),1457-1461.
MLA	M. H. Wang,et al."Thermal crystallization kinetic and electrical properties of partly crystallized amorphous indium oxide thin films sputtering deposited in the presence or the absence of water vapor".Journal of Thermal Analysis and Calorimetry 111.2(2013):1457-1461.