Proton conducting zeolite films for low-voltage oxide-based electric-double-layer thin-film transistors and logic gates | |
黄爱生、万青 ; Guodong Wu,ab Hongliang Zhang,a Jumei Zhou,a Aisheng Huang*a and Qing Wan*ab | |
刊名 | Journal of Materials Chemistry C
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2013-07-17 | |
卷号 | 3期号:36页码:5669—5674 |
通讯作者 | 黄爱生、万青 |
合作状况 | 李雨桐 |
中文摘要 | Three-dimensional nanoporous zeolite films with Linde Type A (LTA) structure prepared by a seeding-free synthesis strategy exhibited high room-temperature proton conductivity and large electric-double-layer (EDL) capacitance. In-plane-gate indium-zinc-oxide thin-film transistors gated by such proton conducting zeolite LTA films were fabricated by a simple self-assembled method. Due to the strong EDL capacitive coupling triggered by mobile protons in zeolite LTA, such transistors showed a low-voltage operation of 1.5 V and a high performance with a large field-effect mobility of 13 cm2 V 1 s 1 and a small subthreshold swing of 95 mV per decade. Furthermore, AND logic operation was also experimentally demonstrated on the dual in-plane-gate EDL transistors. Our results strongly indicate that zeolite LTA films are promising gate dielectric candidates for application in low-voltage and low-cost electronics, which greatly expands the application areas of zeolites. |
学科主题 | 物理化学 |
原文出处 | SCI收录 |
公开日期 | 2013-12-16 |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/9984] ![]() |
专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
推荐引用方式 GB/T 7714 | 黄爱生、万青,Guodong Wu,ab Hongliang Zhang,a Jumei Zhou,a Aisheng Huang*a and Qing Wan*ab. Proton conducting zeolite films for low-voltage oxide-based electric-double-layer thin-film transistors and logic gates[J]. Journal of Materials Chemistry C,2013,3(36):5669—5674. |
APA | 黄爱生、万青,&Guodong Wu,ab Hongliang Zhang,a Jumei Zhou,a Aisheng Huang*a and Qing Wan*ab.(2013).Proton conducting zeolite films for low-voltage oxide-based electric-double-layer thin-film transistors and logic gates.Journal of Materials Chemistry C,3(36),5669—5674. |
MLA | 黄爱生、万青,et al."Proton conducting zeolite films for low-voltage oxide-based electric-double-layer thin-film transistors and logic gates".Journal of Materials Chemistry C 3.36(2013):5669—5674. |
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