Nanogranular Al2O3 Proton Conducting Films for Low-Voltage Oxide-based Homojunction Thin-Film Transistors

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 宁波所知识产出

	Nanogranular Al2O3 Proton Conducting Films for Low-Voltage Oxide-based Homojunction Thin-Film Transistors
	Wan Q(万青) ; Hongliang Zhang, Liqiang Guo and Qing Wan*
刊名	Journal of Materials Chemistry C
	2013-02-20
卷号	19 期号:15 页码:2781—2786
通讯作者	万青
合作状况	李雨桐
中文摘要	Nanogranular Al2O3 films were deposited by the plasma-enhanced chemical vapor deposition (PECVD) method using gas sources of trimethylaluminum and oxygen at 100 C. Structural characterizations indicate that the as-deposited nanogranular Al2O3 film has an amorphous structure with excess oxygen due to ambient humidity and residual hydroxyl. As-deposited Al2O3 films show a mean pore size of 7.4 nm, and a high proton conductivity of 1.2 10 4 S cm 1 at room temperature with a 30% relative humidity. Low-voltage (1.5 V) indium-tin-oxide (ITO) thin-film transistors gated by such nanogranular Al2O3-based proton conductors exhibit a large current on/off ratio of 2.1 107 and a high field-effect mobility of 29 cm2 V 1 s 1. Our results demonstrate that nanogranular Al2O3-based films are promising gate dielectric candidates for portable biosens
学科主题	物理化学
原文出处	其他国内刊物
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9816]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q,Hongliang Zhang, Liqiang Guo and Qing Wan*. Nanogranular Al2O3 Proton Conducting Films for Low-Voltage Oxide-based Homojunction Thin-Film Transistors[J]. Journal of Materials Chemistry C,2013,19(15):2781—2786.
APA	Wan Q,&Hongliang Zhang, Liqiang Guo and Qing Wan*.(2013).Nanogranular Al2O3 Proton Conducting Films for Low-Voltage Oxide-based Homojunction Thin-Film Transistors.Journal of Materials Chemistry C,19(15),2781—2786.
MLA	Wan Q,et al."Nanogranular Al2O3 Proton Conducting Films for Low-Voltage Oxide-based Homojunction Thin-Film Transistors".Journal of Materials Chemistry C 19.15(2013):2781—2786.