Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates | |
Wan Q(万青) ; Wei Dou, Liqiang Zhu, Jie Jiang, and Qing Wan | |
刊名 | IEEE ELECTRON DEVICE LETTERS
![]() |
2013-02-01 | |
期号 | 2页码:259—261 |
通讯作者 | 万青 |
合作状况 | 李雨桐 |
中文摘要 | Low-voltage flexible dual-gate indium-tin-oxide-based thin-film transistors (TFTs) are self-assembled on SiO2-covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 μF/cm2) due to the electric-double-layer effect. The subthreshold swing, drain-current on/off ratio, and field-effect mobility are estimated to be 80 mV/dec, 4 ×106, and 9.3 cm2/V·s, respectively. Low-voltage operation mechanism and threshold voltage modulation of such dual-gate paper TFTs are investigated. |
学科主题 | 物理化学 |
原文出处 | SCI收录 |
公开日期 | 2013-12-16 |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/9799] ![]() |
专题 | 宁波材料技术与工程研究所_宁波所知识产出 |
推荐引用方式 GB/T 7714 | Wan Q,Wei Dou, Liqiang Zhu, Jie Jiang, and Qing Wan. Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates[J]. IEEE ELECTRON DEVICE LETTERS,2013(2):259—261. |
APA | Wan Q,&Wei Dou, Liqiang Zhu, Jie Jiang, and Qing Wan.(2013).Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates.IEEE ELECTRON DEVICE LETTERS(2),259—261. |
MLA | Wan Q,et al."Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates".IEEE ELECTRON DEVICE LETTERS .2(2013):259—261. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论