Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 宁波所知识产出

	Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function
	Wan Q(万青) ; Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana)
刊名	Applied Physics Letters
	2013-01-28
卷号	90 期号:4 页码:043501-1—043501-4
通讯作者	万青
合作状况	李雨桐
中文摘要	Junctionless oxide-based neuron thin-film transistors with in-plane-gate structure are fabricated at room temperature by a laser scribing process. The neuron transistors are composed of a bottom indium-tin-oxide floating gate and multiples of in-plane control gates. The control gates, coupling with the floating gate, control the “on” and “off” of the transistor. Effective field-effect modulation of the drain current has been realized. AND logic is demonstrated on a dual in-plane gate neuron transistor. The developed laser scribing technology is highly desirable in terms of the fabrication of high performance neuron transistors with low-cost.
学科主题	物理化学
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9790]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Wan Q,Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana). Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function[J]. Applied Physics Letters,2013,90(4):043501-1—043501-4.
APA	Wan Q,&Li Qiang Zhu, Guo Dong Wu, Ju Mei Zhou, Wei Dou, Hong Liang Zhang, and Qing Wana).(2013).Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function.Applied Physics Letters,90(4),043501-1—043501-4.
MLA	Wan Q,et al."Laser directly written junctionless in-plane-gate neuron thin film transistors with AND logic function".Applied Physics Letters 90.4(2013):043501-1—043501-4.