Dielectrophoretic placement of quasi-zero-,one-, and two-dimensional nanomaterials into nanogap for electrical characterizations

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 宁波所知识产出

	Dielectrophoretic placement of quasi-zero-,one-, and two-dimensional nanomaterials into nanogap for electrical characterizations
	Sheng-Hsiung Yang，Wen-Bin Jian ; Yen-Fu Lin1 Shao-Chien Chiu1 Sheng-Tsung Wang1 Sheng-Kai Fu1 Chien-Hsiang Chen1 Wen-Jia Xie1 Sheng-Hsiung Yang2,∗∗ Chain-Shu Hsu2 Jenn-Fang Chen1 Xufeng Zhou3 Zhaoping Liu3 Jiye Fang4 Wen-Bin Jian1,∗
刊名	Electrophoresis
	2012-08-17
卷号	26 期号:33 页码:2475—2481
通讯作者	Sheng-Hsiung Yang，Wen-Bin Jian
合作状况	李雨桐
中文摘要	DEP is one of promising techniques for positioning nanomaterials into the desirable location for nanoelectronic applications. In contrast, the lithography technique is commonly used to make ultra-thin conducting wires and narrow gaps but, due to the limit of patterning resolution, it is not feasible to make electrical contacts on ultra-small nanomaterials for a bottom-up device fabrication. Thus, integrating the lithography and dielectrophoresis, a real bottom-up fabrication can be achieved. In this work, the device with the nanogap in between two nanofinger-electrodes is made using electron-beam lithography from top down and the ultra-small nanomaterials, such as colloidal PbSe quantum dots, polyaniline nanofibers, and reduced-graphene-oxide flakes, are placed in the nanogap by DEP from bottom up. The threshold electric field for the DEP placement of PbSe nanocrystals was roughly estimated to be about 8.3×104 V/cm under our experimental configuration. After the DEP process, several procedures for reducing contact resistances are attempted and measurements of intrinsic electron transport in versatile nanomaterials are performed. It is experimentally confirmed that electron transport in both PbSe nanocrystal arrays and polyaniline nanofibers agrees well with Prof. Ping Sheng’s model of granularmetallic conduction. In addition, electron transport in reduced-graphene-oxide flakes follows Mott’s 2D variable-range-hopping model. This study illustrates an integration of the electronbeam lithography and the DEP techniques for a precise manipulation of nanomaterials into electronic circuits for characterization of intrinsic properties.
学科主题	物理化学
原文出处	其他国内刊物
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9683]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Sheng-Hsiung Yang，Wen-Bin Jian,Yen-Fu Lin1 Shao-Chien Chiu1 Sheng-Tsung Wang1 Sheng-Kai Fu1 Chien-Hsiang Chen1 Wen-Jia Xie1 Sheng-Hsiung Yang2,∗∗ Chain-Shu Hsu2 Jenn-Fang Chen1 Xufeng Zhou3 Zhaoping Liu3 Jiye Fang4 Wen-Bin Jian1,∗. Dielectrophoretic placement of quasi-zero-,one-, and two-dimensional nanomaterials into nanogap for electrical characterizations[J]. Electrophoresis,2012,26(33):2475—2481.
APA	Sheng-Hsiung Yang，Wen-Bin Jian,&Yen-Fu Lin1 Shao-Chien Chiu1 Sheng-Tsung Wang1 Sheng-Kai Fu1 Chien-Hsiang Chen1 Wen-Jia Xie1 Sheng-Hsiung Yang2,∗∗ Chain-Shu Hsu2 Jenn-Fang Chen1 Xufeng Zhou3 Zhaoping Liu3 Jiye Fang4 Wen-Bin Jian1,∗.(2012).Dielectrophoretic placement of quasi-zero-,one-, and two-dimensional nanomaterials into nanogap for electrical characterizations.Electrophoresis,26(33),2475—2481.
MLA	Sheng-Hsiung Yang，Wen-Bin Jian,et al."Dielectrophoretic placement of quasi-zero-,one-, and two-dimensional nanomaterials into nanogap for electrical characterizations".Electrophoresis 26.33(2012):2475—2481.