Resistive switching effects in oxide sandwiched structures

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 宁波所知识产出

	Resistive switching effects in oxide sandwiched structures
	Li RW(李润伟) ; Xiao-Jian ZHU1,2, Jie SHANG1,2, and Run-Wei LI (✉)1,2
刊名	Front. Mater. Sci.
	2012-05-24
卷号	14 页码:1—24
通讯作者	李润伟
合作状况	李雨桐
中文摘要	Resistive switching (RS) behaviors have attracted great interest due to their promising potential for the data storage. Among various materials, oxide-based devices appear to be more advantageous considering their handy fabrication and compatibility with CMOS technology, though the underlying mechanism is still controversial due to the diversity of RS behaviors. In this review, we focus on the oxide-based RS memories, in which the working mechanism can be understood basically according to a so-called filament model. The filaments formation/rupture processes, approaches developed to detect and characterize filaments, several effective attempts to improve the performances of RS and the quantum conductance behaviors in oxide-based resistive random access memory (RRAM) devices are addressed, respectively
学科主题	磁电子材料与器件组
原文出处	SCI收录
公开日期	2013-12-16
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/9621]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Li RW,Xiao-Jian ZHU1,2, Jie SHANG1,2, and Run-Wei LI . Resistive switching effects in oxide sandwiched structures[J]. Front. Mater. Sci.,2012,14:1—24.
APA	Li RW,&Xiao-Jian ZHU1,2, Jie SHANG1,2, and Run-Wei LI .(2012).Resistive switching effects in oxide sandwiched structures.Front. Mater. Sci.,14,1—24.
MLA	Li RW,et al."Resistive switching effects in oxide sandwiched structures".Front. Mater. Sci. 14(2012):1—24.