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	Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers
	Zhang HZ ; Cao HT ; Chen AH ; Liang LY ; Liu ZM ; Wan Q
	2010
公开日期	2010-06-09
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/351]
专题	宁波材料技术与工程研究所_宁波所知识产出
推荐引用方式 GB/T 7714	Zhang HZ,Cao HT,Chen AH,et al. Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers[J],2010.
APA	Zhang HZ,Cao HT,Chen AH,Liang LY,Liu ZM,&Wan Q.(2010).Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers..
MLA	Zhang HZ,et al."Enhancement of electrical performance in In2O3 thin-film transistors by improving the densification and surface morphology of channel layers".(2010).

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