Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing

CORC > 力学研究所 > 中国科学院力学研究所 > 非线性力学国家重点实验室

	Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing
	Chen B; Wang J(王军); Gao Q; Chen YJ; Liao XZ; Lu CS; Tan HH; Mai YW; Zou J; Ringer SP
刊名	NANO LETTERS
	2013-09-11
通讯作者邮箱	xiaozhou.liao@sydney.edu.au;C.Lu@curtin.edu.au
卷号	13 期号:9 页码:4369-4373
关键词	GaAs nanowires strengthening stacking fault in situ deformation molecular dynamics transmission electron microscopy
ISSN号	1530-6984
通讯作者	Liao, XZ (reprint author), Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia.
产权排序	[Chen, Bin; Chen, Yujie; Liao, Xiaozhou; Mai, Yiu-Wing; Ringer, Simon P.] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia; [Wang, Jun] Chinese Acad Sci, State Key Lab Nonlinear Mech LNM, Inst Mech, Beijing 100190, Peoples R China; [Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 0200, Australia; [Lu, Chunsheng] Curtin Univ, Dept Mech Engn, Perth, WA 6845, Australia; [Zou, Jin] Univ Queensland, St Lucia, Qld 4072, Australia; [Zou, Jin] Univ Queensland, Ctr Microscopy & Microanal, St Lucia, Qld 4072, Australia; [Ringer, Simon P.] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia; [Gao, Huajian] Brown Univ, Sch Engn, Providence, RI 02912 USA
合作状况	国际
中文摘要	Quantitative mechanical testing of single-crystal GaAs nanowires was conducted using in situ deformation transmission electron microscopy. Both zinc-blende and wurtzite structured GaAs nanowires showed essentially elastic deformation until bending failure associated with buckling occurred. These nanowires fail at compressive stresses of ～5.4 GPa and 6.2 GPa, respectively, which are close to those values calculated by molecular dynamics simulations. Interestingly, wurtzite nanowires with a high density of stacking faults fail at a very high compressive stress of ～9.0 GPa, demonstrating that the nanowires can be strengthened through defect engineering. The reasons for the observed phenomenon are discussed.
学科主题	新型材料的力学问题
分类号	一类
收录类别	SCI ; EI
资助信息	Australian Microscopy and Microanalysis Research Facility Node at the University of Sydney; Australian Research Council; National Natural Science Foundation of China [11172024, 11232013, 11372022]; China Postdoctoral Science Foundation [2012T50029]; State Key Laboratory of Nonlinear Mechanics
原文出处	http://dx.doi.org/10.1021/nl402180k
语种	英语
WOS记录号	WOS:000330158900064
公开日期	2013-12-23
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/47601]
专题	力学研究所_非线性力学国家重点实验室
推荐引用方式 GB/T 7714	Chen B,Wang J,Gao Q,et al. Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing[J]. NANO LETTERS,2013,13(9):4369-4373.
APA	Chen B.,Wang J.,Gao Q.,Chen YJ.,Liao XZ.,...&Jagadish C.(2013).Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing.NANO LETTERS,13(9),4369-4373.
MLA	Chen B,et al."Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing".NANO LETTERS 13.9(2013):4369-4373.