Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range

doi:10.1002/adpr.202200223

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	Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range
	S. Sarkar, A. A. Elsayed, Y. M. Sabry, F. Marty, J. Drevillon, X. Liu, Z. Liang, E. Richalot, P. Basset, E. Nefzaoui and T. Bourouina
刊名	Advanced Photonics Research
	2023
卷号	4 期号:2
ISSN号	26999293
DOI	10.1002/adpr.202200223
英文摘要	Black silicon properties are investigated in the wavelength range extending from 0.2 to 25 μm with a focus on the mid-infrared (MIR). It is demonstrated that concurrently increasing the initial level of doping of bare silicon, with given limits, enables reaching even higher absorptance and higher spectral range. Unprecedented light absorptance levels are obtained on black silicon with up to 99.5% in the spectral range from 1 to 8 μm and above 90% until 20 μm, leading to ultrabroadband, ultrablack silicon surfaces. The synergetic effects of morphology and volume doping are elucidated; in particular, how the high aspect-ratio of conical nanostructures plays a crucial role. The experimental findings are analyzed with numerical simulations involving plasmonic effects of highly doped silicon and supported by tomographic processing of microscopy images. Guidelines and corresponding manufacturing routes are provided by which ultrabroadband, ultrablack silicon surfaces can be obtained within minutes of plasma processing, with no need for further functionalization. With the scalable manufacturing involving solely pure silicon, the resulting ultrabroadband perfect absorbers should be of benefit for large-scale deployment of radiative cooling devices, blackbody infrared light sources, and infrared radiation sensing. © 2022 The Authors. Advanced Photonics Research published by Wiley-VCH GmbH.
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内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/67826]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	S. Sarkar, A. A. Elsayed, Y. M. Sabry, F. Marty, J. Drevillon, X. Liu, Z. Liang, E. Richalot, P. Basset, E. Nefzaoui and T. Bourouina. Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range[J]. Advanced Photonics Research,2023,4(2).
APA	S. Sarkar, A. A. Elsayed, Y. M. Sabry, F. Marty, J. Drevillon, X. Liu, Z. Liang, E. Richalot, P. Basset, E. Nefzaoui and T. Bourouina.(2023).Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range.Advanced Photonics Research,4(2).
MLA	S. Sarkar, A. A. Elsayed, Y. M. Sabry, F. Marty, J. Drevillon, X. Liu, Z. Liang, E. Richalot, P. Basset, E. Nefzaoui and T. Bourouina."Black Silicon Revisited as an Ultrabroadband Perfect Infrared Absorber over 20 μm Wavelength Range".Advanced Photonics Research 4.2(2023).