The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition
D. Peng, Q. S. Zeng, F. J. Lan, Z. F. Xing, Y. Ding and H. K. Mao
刊名Matter and Radiation at Extremes
2023
卷号8期号:5页码:3
ISSN号2468-2047
DOI10.1063/5.0166430
英文摘要The recent report of superconductivity in nitrogen-doped lutetium hydride (Lu-H-N) at 294 K and 1 GPa brought hope for long-sought-after ambient-condition superconductors. However, the failure of scientists worldwide to independently reproduce these results has cast intense skepticism on this exciting claim. In this work, using a reliable experimental protocol, we synthesized Lu-H-N while minimizing extrinsic influences and reproduced the sudden change in resistance near room temperature. With quantitative comparison of the temperature-dependent resistance between Lu-H-N and the pure lutetium before reaction, we were able to clarify that the drastic resistance change is most likely caused by a metal-to-poor-conductor transition rather than by superconductivity. Herein, we also briefly discuss other issues recently raised in relation to the Lu-H-N system.
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语种英语
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/67787]  
专题中国科学院长春光学精密机械与物理研究所
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D. Peng, Q. S. Zeng, F. J. Lan, Z. F. Xing, Y. Ding and H. K. Mao. The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition[J]. Matter and Radiation at Extremes,2023,8(5):3.
APA D. Peng, Q. S. Zeng, F. J. Lan, Z. F. Xing, Y. Ding and H. K. Mao.(2023).The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition.Matter and Radiation at Extremes,8(5),3.
MLA D. Peng, Q. S. Zeng, F. J. Lan, Z. F. Xing, Y. Ding and H. K. Mao."The near-room-temperature upsurge of electrical resistivity in Lu-H-N is not superconductivity, but a metal-to-poor-conductor transition".Matter and Radiation at Extremes 8.5(2023):3.
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