Self-Mode-Locked 2-μm GaSb-Based Optically Pumped Semiconductor Disk Laser

doi:10.3390/app13126873

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	Self-Mode-Locked 2-μm GaSb-Based Optically Pumped Semiconductor Disk Laser
	J. Feng; B. Meng; J. M. Shang; X. Zhang; C. Z. Tong; Y. Zhang; Z. C. Niu and L. J. Wang
刊名	Applied Sciences-Basel
	2023
卷号	13 期号:12 页码:10
DOI	10.3390/app13126873
英文摘要	We present a mode-locked GaSb-based optically pumped semiconductor disk laser operating at 2 mu m based on the self-mode-locked mechanism. Using the delay differential equation model, we discuss the influence of cavity length on the stability of self-mode-locking and design a Z-shaped long cavity for self-mode-locking. Employing an aperture and an F-P etalon in the cavity length of similar to 365 mm, we obtain stable self-mode-locking at a center wavelength of 2034.5 nm, with a pulse duration of 255.48 ps and average output power of 173 mW at a repetition rate of 404 MHz.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/67456]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	J. Feng,B. Meng,J. M. Shang,et al. Self-Mode-Locked 2-μm GaSb-Based Optically Pumped Semiconductor Disk Laser[J]. Applied Sciences-Basel,2023,13(12):10.
APA	J. Feng.,B. Meng.,J. M. Shang.,X. Zhang.,C. Z. Tong.,...&Z. C. Niu and L. J. Wang.(2023).Self-Mode-Locked 2-μm GaSb-Based Optically Pumped Semiconductor Disk Laser.Applied Sciences-Basel,13(12),10.
MLA	J. Feng,et al."Self-Mode-Locked 2-μm GaSb-Based Optically Pumped Semiconductor Disk Laser".Applied Sciences-Basel 13.12(2023):10.