A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions

	A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions
	Yu, T.; Zhao, Z.; Jiang, H.; Weng, Z.; Fang, Y.; Liu, C.; Lei, W.; Shafe, S. B.; Mohtar, M. N.
刊名	MATERIALS TODAY NANO
	2022
卷号	19
内容类型	期刊论文
源URL	[http://159.226.73.51/handle/332005/21536]
专题	中国科学院南京地理与湖泊研究所
推荐引用方式 GB/T 7714	Yu, T.,Zhao, Z.,Jiang, H.,et al. A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions[J]. MATERIALS TODAY NANO,2022,19.
APA	Yu, T..,Zhao, Z..,Jiang, H..,Weng, Z..,Fang, Y..,...&Mohtar, M. N..(2022).A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions.MATERIALS TODAY NANO,19.
MLA	Yu, T.,et al."A low-power memristor based on 2H-MoTe2 nanosheets with synaptic plasticity and arithmetic functions".MATERIALS TODAY NANO 19(2022).