Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure
X. Li; H. X. Tai; Y. H. Wang; M. Zheng; J. W. Zhang; X. Zhang; Y. Q. Ning; J. Wu and L. J. Wang
刊名Journal of Infrared and Millimeter Waves
2022
卷号41期号:3页码:540-544
ISSN号1001-9014
DOI10.11972/j.issn.1001-9014.2022.03.003
英文摘要We design and fabricate a double-wavelength tunable laser with a single grating structure using a single-gain chip. The gain chip adopts an indium-rich cluster quantum constraint structure,which can generate ultrawide flat-top gain. The flat-top gain is the basis for producing a dual-wavelength laser with the same intensity. A grating is inserted into the exterior of the gain chip so that its resonator is composed of internal and external cavi. ties. The internal cavity consists of two natural cleavage planes of the gain chip for oscillating the output laser at a fixed wavelength(974 nm). The tunable external cavity consists of a natural cleavage plane and a grating for the output laser at a tunable wavelength(969. 1 similar to 977. 9 nm). The laser structures of the single-gain chip and single grating can produce synchronous dual-wavelength output,which avoids a complicated optical path design. The frequency difference between the two wavelengths is in the terahertz band. Thus,the laser can be used as a dualwavelength laser source to generate terahertz radiation.
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内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/67194]  
专题中国科学院长春光学精密机械与物理研究所
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X. Li,H. X. Tai,Y. H. Wang,et al. Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure[J]. Journal of Infrared and Millimeter Waves,2022,41(3):540-544.
APA X. Li.,H. X. Tai.,Y. H. Wang.,M. Zheng.,J. W. Zhang.,...&J. Wu and L. J. Wang.(2022).Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure.Journal of Infrared and Millimeter Waves,41(3),540-544.
MLA X. Li,et al."Tunable dual-wavelength semiconductor laser based on indium-rich cluster quantum structure".Journal of Infrared and Millimeter Waves 41.3(2022):540-544.
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