Hybrid Ga2O3/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity

doi:10.1109/ted.2022.3206186

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	Hybrid Ga2O3/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity
	Z. P. Liu; C. S. Chu; B. X. Wang; G. S. Huang; K. Jiang; Y. H. Zhang; X. J. Sun; Z. H. Zhang and D. B. Li
刊名	Ieee Transactions on Electron Devices
	2022
卷号	69 期号:11 页码:6166-6170
ISSN号	0018-9383
DOI	10.1109/ted.2022.3206186
英文摘要	In this work, a metal/Ga2O3/AlGaN/GaN hybrid-structured metal-semiconductor-metal ultraviolet photodetector (MSM UV PD) with low dark current has been proposed and fabricated. In the dark condition, the depletion region formed by the metal gate and the AlGaN layer pinches off the two-dimensional electron gas (2DEG) channel, and we can obtain a dark current even lower than 10(-10) A/cm(2). In the illumination condition, due to the electric field formed by the metal and the Ga2O3 layer, the photogenerated electrons will move to the AlGaN/GaN channel to form the 2DEG. We then get a photo-to-dark current ratio of 8.77 x 10(8). Furthermore, the detectivity of the device is higher than 3.30 x 10(12) Jones when a 254-nm UV illumination signal is applied.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/66735]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Z. P. Liu,C. S. Chu,B. X. Wang,et al. Hybrid Ga2O3/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity[J]. Ieee Transactions on Electron Devices,2022,69(11):6166-6170.
APA	Z. P. Liu.,C. S. Chu.,B. X. Wang.,G. S. Huang.,K. Jiang.,...&Z. H. Zhang and D. B. Li.(2022).Hybrid Ga2O3/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity.Ieee Transactions on Electron Devices,69(11),6166-6170.
MLA	Z. P. Liu,et al."Hybrid Ga2O3/AlGaN/GaN Ultraviolet Detector With Gate Metal in the Grooved AlGaN Layer for Obtaining Low Dark Current and Large Detectivity".Ieee Transactions on Electron Devices 69.11(2022):6166-6170.