High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain

doi:10.1109/TED.2022.3184277

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	High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain
	Z. Zheng; B. Qiao; Z. Zhang; X. Huang; X. Xie; B. Li; X. Chen; K. Liu; L. Liu and D. Shen
刊名	IEEE Transactions on Electron Devices
	2022
卷号	69 期号:8 页码:4362-4365
ISSN号	00189383
DOI	10.1109/TED.2022.3184277
英文摘要	Detectivity is the most key parameter in weak-signal photodetection, which depends on high photoresponse and low noise simultaneously. In this work, metalsemiconductormetal solar-blind UV detectors with internal gain were fabricated based on high resistant and a certain oxygen vacancy density Ga2O3 thin films. Electrical measurements and electric field simulation indicated that thickening the active layer is helpful for high responsivity. The gain is dominated by the tunneling effect in high electric field under the electrodes. A high photoresponse of 371 A/W and a normalized detectivity up to 6.6 1016 Jones were obtained. 2022 Institute of Electrical and Electronics Engineers Inc.. All rights reserved.
URL标识	查看原文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/66705]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Z. Zheng,B. Qiao,Z. Zhang,et al. High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain[J]. IEEE Transactions on Electron Devices,2022,69(8):4362-4365.
APA	Z. Zheng.,B. Qiao.,Z. Zhang.,X. Huang.,X. Xie.,...&L. Liu and D. Shen.(2022).High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain.IEEE Transactions on Electron Devices,69(8),4362-4365.
MLA	Z. Zheng,et al."High Detectivity of MetalSemiconductorMetal Ga2O3 Solar-Blind Photodetector Through Thickness-Regulated Gain".IEEE Transactions on Electron Devices 69.8(2022):4362-4365.