Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface

doi:10.1088/1674-1056/ac5396

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	Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface
	W. M. Jiang; Q. Zhao; J. Z. Ling; T. N. Shao; Z. T. Zhang; M. R. Liu; C. L. Yao; Y. J. Qiao; M. H. Chen; X. Y. Chen
刊名	Chinese Physics B
	2022
卷号	31 期号:6 页码:5
ISSN号	1674-1056
DOI	10.1088/1674-1056/ac5396
英文摘要	High mobility quasi two-dimensional electron gas (2DEG) found at the CaZrO3/SrTiO3 nonpolar heterointerface is attractive and provides a platform for the development of functional devices and nanoelectronics. Here we report that the carrier density and mobility at low temperature can be tuned by gate voltage at the CaZrO3/SrTiO3 interface. Furthermore, the magnitude of Rashba spin-orbit interaction can be modulated and increases with the gate voltage. Remarkably, the diffusion constant and the spin-orbit relaxation time can be strongly tuned by gate voltage. The diffusion constant increases by a factor of similar to 19.98 and the relaxation time is reduced by a factor of over three orders of magnitude while the gate voltage is swept from -50 V to 100 V. These findings not only lay a foundation for further understanding the underlying mechanism of Rashba spin-orbit coupling, but also have great significance in developing various oxide functional devices.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/66689]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	W. M. Jiang,Q. Zhao,J. Z. Ling,et al. Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface[J]. Chinese Physics B,2022,31(6):5.
APA	W. M. Jiang.,Q. Zhao.,J. Z. Ling.,T. N. Shao.,Z. T. Zhang.,...&C. M. Xiong and J. C. Nie.(2022).Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface.Chinese Physics B,31(6),5.
MLA	W. M. Jiang,et al."Gate tunable Rashba spin-orbit coupling at CaZrO3/SrTiO3 heterointerface".Chinese Physics B 31.6(2022):5.