Engineering the synthesized colloidal CuInS2 passivation layer in interface modification for CdS/CdSe quantum dot solar cells
Z. J. Liang; Y. F. Chen; R. Zhang; K. Zhang; K. K. Ba; Y. H. Lin; D. J. Wang and T. F. Xie
刊名Dalton Transactions
2022
卷号51期号:45页码:17292-17300
ISSN号1477-9226
DOI10.1039/d2dt02555h
英文摘要Interface modification is an important means to enhance the photovoltaic performance of quantum dot sensitized solar cells (QDSCs). The TiO2/CdS/CdSe solar cells are sensitized with CdS QDs and CdSe QDs, which inevitably introduces a new interface to form a recombination center. Therefore, it is necessary to coat a passivation layer in order to effectively inhibit charge recombination at the CdS/CdSe interface. In this work, CuInS2 (CIS) has been introduced into the CdS/CdSe QD system as an inner passivation layer and the CdS/CIS/CdSe photoanode structure has been fabricated in an environmentally friendly manner. The extracted charge amount (Q) is used to express the charge separation efficiency, indicating that we have obtained outstanding charge extraction efficiency in CIS based CdS/CdSe QDSCs. As a result, the photocurrent density of the TiO2/CdS/CIS/CdSe photoanode significantly has increased from 19.01 mA cm(-2) to 22.74 mA cm(-2) (TiO2/CdS/CdSe photoanode), which demonstrates a higher photoconversion efficiency of 4.52% in comparison with that of TiO2/CdS/CdSe photoanode.
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语种英语
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/66619]  
专题中国科学院长春光学精密机械与物理研究所
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Z. J. Liang,Y. F. Chen,R. Zhang,et al. Engineering the synthesized colloidal CuInS2 passivation layer in interface modification for CdS/CdSe quantum dot solar cells[J]. Dalton Transactions,2022,51(45):17292-17300.
APA Z. J. Liang.,Y. F. Chen.,R. Zhang.,K. Zhang.,K. K. Ba.,...&D. J. Wang and T. F. Xie.(2022).Engineering the synthesized colloidal CuInS2 passivation layer in interface modification for CdS/CdSe quantum dot solar cells.Dalton Transactions,51(45),17292-17300.
MLA Z. J. Liang,et al."Engineering the synthesized colloidal CuInS2 passivation layer in interface modification for CdS/CdSe quantum dot solar cells".Dalton Transactions 51.45(2022):17292-17300.
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