Semiconductor-metal transition in lead iodide under pressure

doi:10.1063/5.0095525

	Semiconductor-metal transition in lead iodide under pressure
	Cheng, Peng 1,2; Wang, Yunfeng 1,2; Ye, Tingting 1,2; Chu, Lingqiao 1,2; Yang, Jin 1,2; Zeng, Hong 1,2; Yao, Deyuan 1,2; Pan, Xiaomei 1,2; Zhang, Jie 1,2; Jiang, Huachao 1,2
刊名	APPLIED PHYSICS LETTERS
	2022-05-23
卷号	120
ISSN号	0003-6951
DOI	10.1063/5.0095525
通讯作者	Su, Fuhai(fhsu@issp.ac.cn) ; Ding, Junfeng(junfengding@issp.ac.cn)
英文摘要	The two-dimensional (2D) semiconductor lead iodide (PbI2) has recently attracted considerable attention owing to its favorable properties in both applications as photodetectors and as a precursor for lead halide perovskite solar cells. Although earlier experiments have investigated the structural stability of PbI2 below 20 GPa, the electric structures at high pressure remain ambiguous, as does the crystal structure at higher pressures. Herein, a structural phase transition and a semiconductor-metal transition are revealed in PbI2 through high-pressure femtosecond optical pump-probe spectroscopy combined with Raman spectra, synchrotron x-ray diffraction (XRD), and resistance measurements up to 70 GPa. Two discontinuities appear in the pressure-dependent amplitude of the ultrafast spectroscopy at approximately 24.8 and 37.6 GPa. Raman spectra and in situ XRD patterns confirm a structural phase transition from orthorhombic Pnma to tetragonal I4/MMM symmetry at the first discontinuity. The second discontinuity is ascribed to the closure of the bandgap and the enhanced electron-phonon interaction across the semiconductor-metal transition, which is also revealed by the temperature dependencies of resistance for PbI2 under pressure. Our results not only help to design optical devices based on lead iodide but also highlight that ultrafast spectroscopy is an efficient noncontact tool to investigate the crystalline and electric phase transition under pressures simultaneously.& nbsp;Published under an exclusive license by AIP Publishing.
资助项目	National Natural Science Foundation of China[52002372] ; National Natural Science Foundation of China[51672279] ; National Natural Science Foundation of China[51727806] ; National Natural Science Foundation of China[11874361] ; National Natural Science Foundation of China[12174398] ; Science Challenge Project[TZ2016001] ; CAS Innovation Grant[CXJJ-19-B08]
WOS关键词	ABSORPTION-EDGE ; SINGLE-CRYSTALS ; PBI2 ; RAMAN
WOS研究方向	Physics
语种	英语
出版者	AIP Publishing
WOS记录号	WOS:000802875500001
资助机构	National Natural Science Foundation of China ; Science Challenge Project ; CAS Innovation Grant
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/131125]
专题	中国科学院合肥物质科学研究院
通讯作者	Su, Fuhai; Ding, Junfeng
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Hefei Inst Phys Sci, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China
推荐引用方式 GB/T 7714	Cheng, Peng,Wang, Yunfeng,Ye, Tingting,et al. Semiconductor-metal transition in lead iodide under pressure[J]. APPLIED PHYSICS LETTERS,2022,120.
APA	Cheng, Peng.,Wang, Yunfeng.,Ye, Tingting.,Chu, Lingqiao.,Yang, Jin.,...&Ding, Junfeng.(2022).Semiconductor-metal transition in lead iodide under pressure.APPLIED PHYSICS LETTERS,120.
MLA	Cheng, Peng,et al."Semiconductor-metal transition in lead iodide under pressure".APPLIED PHYSICS LETTERS 120(2022).