Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers

doi:10.1063/5.0105206

	Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers
	Wu, Yanwei 1; Liu, Tao 1; Hao, Ning 2; Long, Mingsheng 1; Zhang, Min 3; Sun, Qingqing 4; Shan, Lei 1
刊名	AIP ADVANCES
	2022-10-01
卷号	12
DOI	10.1063/5.0105206
通讯作者	Wu, Yanwei(wywss433@126.com) ; Shan, Lei(lshan@ahu.edu.cn)
英文摘要	In this work, we focused on engineering the bandgap of the MoS2-MoSe2 heterobilayer via either stacking type or induced magnetic moment with the aid of density functional theory. We have computed the electronic properties of different stacking MoS2-MoSe2 heterobilayers and their magnetization components, in which all situations retain spin-valley locking. Calculations show that different stacking types can cause a bandgap change of a maximum of 0.1 eV. On the other hand, a micro-enhanced magnetic moment in the heterobilayer increases the bandgap (in some cases, there are changes close to 0.3 eV) significantly. Results suggest that the stacking type and induced magnetic moment make MoS2-MoSe2 heterobilayers potential candidates for valleytronics applications. This study provides a new pathway in tuning spin-valley polarization of valleytronics devices.
资助项目	National Natural Science Foundation of China[61975224] ; University Synergy Innovation Program of Anhui Province[GXXT-2020-050] ; Fund of Anhui Provincial Natural Science Foundation[2008085MF206] ; Recruitment Program for Leading Talent Team of Anhui Province ; State Key Laboratory of Luminescence and Applications[SKLA-2021-03] ; Jiaxing Science and Technology Project[2021AY10057] ; Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province[IRKL2022KF03]
WOS关键词	CHARGE-TRANSFER ; MOS2 ; SE ; FERROMAGNETISM ; MONOLAYERS ; EFFICIENT ; STRAIN ; X=S ; TE
WOS研究方向	Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	AIP Publishing
WOS记录号	WOS:000875745500002
资助机构	National Natural Science Foundation of China ; University Synergy Innovation Program of Anhui Province ; Fund of Anhui Provincial Natural Science Foundation ; Recruitment Program for Leading Talent Team of Anhui Province ; State Key Laboratory of Luminescence and Applications ; Jiaxing Science and Technology Project ; Open Fund of Infrared and Low-Temperature Plasma Key Laboratory of Anhui Province
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/130045]
专题	中国科学院合肥物质科学研究院
通讯作者	Wu, Yanwei; Shan, Lei
作者单位	1.Anhui Univ, Inst Phys Sci & Informat Technol, Informat Mat & Intelligent Sensing Lab Anhui Prov, Key Lab Struct & Funct Regulat Hybrid Mat,Minist E, 111 Jiu Long Rd, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Anhui Prov Key Lab Condensed Matter Phys Extreme C, High Magnet Field Lab, Hefei 230031, Peoples R China 3.Jiaxing Univ, Coll Data Sci, Jiaxing 314001, Peoples R China 4.Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, 220 Handan Rd, Shanghai 200433, Peoples R China
推荐引用方式 GB/T 7714	Wu, Yanwei,Liu, Tao,Hao, Ning,et al. Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers[J]. AIP ADVANCES,2022,12.
APA	Wu, Yanwei.,Liu, Tao.,Hao, Ning.,Long, Mingsheng.,Zhang, Min.,...&Shan, Lei.(2022).Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers.AIP ADVANCES,12.
MLA	Wu, Yanwei,et al."Effect of stacking type and magnetic moment in spin-valley polarized MoS2-MoSe2 heterobilayers".AIP ADVANCES 12(2022).