Modification of a-C:H films via nitrogen and silicon doping: The way to the superlubricity in moisture atmosphere

doi:10.1016/j.diamond.2020.107873

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	Modification of a-C:H films via nitrogen and silicon doping: The way to the superlubricity in moisture atmosphere
	Wang, Kai 2,4; Yang, Baoping 4; Zhang, Bin 2; Bai, Changning 2,3; Mou, Zhixing 2,4; Gao, Kaixiong 2; Yushkov, Georgy 1; Oks, Efim 5
刊名	Diamond and Related Materials
	2020-08-01
卷号	107
关键词	Carbon films Chemical bonds Chromium compounds Dangling bonds Debris Friction Hematite Moisture Nitrogen Plasma CVD Plasma enhanced chemical vapor deposition Semiconductor doping Silicon compounds Wear of materials Element distribution Friction force Hydrogenated carbon films Open atmosphere Plasma enhanced chemical vapor depositions (PE CVD) Si (100) substrate Silicon doping Sliding conditions
ISSN号	09259635
DOI	10.1016/j.diamond.2020.107873
英文摘要	Both nitrogen and silicon-doped carbon (a-CNx:H and a-CSi:H) films show superlubrcity properties in distinguished sliding conditions, but most running machines are required to serve in humidity air atmosphere. Therefore, we aim to explore N and Si doping effects on tribology of a-C:H films and reveal the basic factors of superlubricity in open atmosphere with a humidity of 41%. In present work, three kinds of films (a-C:H, a-CNx:H and the a-CSi:H films) were prepared on n-Si(100) substrates by plasma-enhanced chemical vapor deposition (PECVD). The thickness, element distribution, bonding topolograph and nanostructure of all films before and after friction test, including wear debris, tracks and debris, were detected by means of XPS, Raman, HRTEM and SEM, etc. Compared with hydrogenated carbon film (a-C:H), the highest COF (0.089) and wear rate (3.61 × 10−7 mm3/Nm) of a-CNx:H film are attributed to forming Fe3C, Fe2O3 and Cr2O3 on the slide surface due to the chemical reaction with moisture atmosphere, which caused by the emission of N element via the broken C[dbnd]N structure that induced more activity dangling bonds. However, the silicon-doped carbon film (a-CSi:H) exhibited extremely low COF (0.007) and extremely low wear rate (4.76 × 10−8 mm3/Nm), which can be ascribed to the Si which is more reactive with moisture atmosphere, prohibiting the oxidization of carbon matrix and helping to forming more curved graphene structures to low the friction force. © 2020 Elsevier B.V.
语种	英语
出版者	Elsevier Ltd
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/115763]
专题	图书馆
作者单位	1.High Current Electronics Institute, Russian Academy of Sciences, Tomsk; 634055, Russia; 2.State Key Laboratory of Solid Lubrication, R&D Center of Lubricating and Protecting Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou; 730000, China; 3.Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing; 100049, China; 4.College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou; 730050, China; 5.Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Avenue, Tomsk; 634050, Russia
推荐引用方式 GB/T 7714	Wang, Kai,Yang, Baoping,Zhang, Bin,et al. Modification of a-C:H films via nitrogen and silicon doping: The way to the superlubricity in moisture atmosphere[J]. Diamond and Related Materials,2020,107.
APA	Wang, Kai.,Yang, Baoping.,Zhang, Bin.,Bai, Changning.,Mou, Zhixing.,...&Oks, Efim.(2020).Modification of a-C:H films via nitrogen and silicon doping: The way to the superlubricity in moisture atmosphere.Diamond and Related Materials,107.
MLA	Wang, Kai,et al."Modification of a-C:H films via nitrogen and silicon doping: The way to the superlubricity in moisture atmosphere".Diamond and Related Materials 107(2020).