Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO
Han, Ning1,2; Chai, Linyu1,2; Wang, Qi3; Tian, Yajun1; Deng, Pingye4; Chen, Yunfa1
刊名SENSORS AND ACTUATORS B-CHEMICAL
2010-06-03
卷号147期号:2页码:525-530
关键词Zinc oxide Dopant Gas sensor Formaldehyde Defects Secondary phase
ISSN号0925-4005
通讯作者Chen, YF
英文摘要Fe-, Ti-, Sn-doped (1.8, 7.4 and 3.4 mol% respectively) and pure ZnO are prepared by hydrothermal method using 10 mol% precursors, whose gas sensing property is studied using formaldehyde as the probe. The results show that the maximum response of pure ZnO to 205 ppm formaldehyde is similar to 43 (at relative humidity 70 +/- 10%) at 400 degrees C. But the gas response maxima shift to 300 degrees C for Fe-ZnO (similar to 52-205 ppm) and Sn-ZnO (similar to 140-205 ppm), and to 200 degrees C for Ti-ZnO (similar to 26-205 ppm). Beyond the maxima, the response of Fe-ZnO is lower than that of pure ZnO, while that of Sn-ZnO is always higher. The morphology, crystal structure, vibration modes, bandgap and crystal defects are studied to investigate the different doping effects on gas sensing property of ZnO. The results show that the secondary phase identified by X-ray diffraction and Raman spectra, and the crystal defects detected by photoluminescence might account for the different sensing behaviors. (C) 2010 Elsevier B.V. All rights reserved.
WOS标题词Science & Technology ; Physical Sciences ; Technology
类目[WOS]Chemistry, Analytical ; Electrochemistry ; Instruments & Instrumentation
研究领域[WOS]Chemistry ; Electrochemistry ; Instruments & Instrumentation
关键词[WOS]THIN-FILMS ; ZINC-OXIDE ; SELECTIVE DETECTION ; THERMAL-OXIDATION ; RAMAN-SCATTERING ; SENSORS ; PHOTOLUMINESCENCE ; TEMPERATURE ; NANOSTRUCTURES ; FABRICATION
收录类别SCI
语种英语
WOS记录号WOS:000278679100022
公开日期2013-11-18
内容类型期刊论文
版本出版稿
源URL[http://ir.ipe.ac.cn/handle/122111/6132]  
专题过程工程研究所_多相复杂系统国家重点实验室
作者单位1.Chinese Acad Sci, Inst Proc Engn, State Key Lab Multiphase Complex Syst, Beijing 100190, Peoples R China
2.Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China
3.Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
4.Beijing Ctr Phys & Chem Anal, Beijing 100089, Peoples R China
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GB/T 7714
Han, Ning,Chai, Linyu,Wang, Qi,et al. Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO[J]. SENSORS AND ACTUATORS B-CHEMICAL,2010,147(2):525-530.
APA Han, Ning,Chai, Linyu,Wang, Qi,Tian, Yajun,Deng, Pingye,&Chen, Yunfa.(2010).Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO.SENSORS AND ACTUATORS B-CHEMICAL,147(2),525-530.
MLA Han, Ning,et al."Evaluating the doping effect of Fe, Ti and Sn on gas sensing property of ZnO".SENSORS AND ACTUATORS B-CHEMICAL 147.2(2010):525-530.
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