The Investigation of Sn heavily doped ZnSe for promising intermediate band materials

doi:10.1016/j.jpcs.2021.109951

	The Investigation of Sn heavily doped ZnSe for promising intermediate band materials
	Yin, Jianbo 1,2; Zhang, Xingxing 1
刊名	JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
	2021
卷号	152
关键词	Zinc selenide Intermediate band Tin doping First principles
ISSN号	0022-3697
DOI	10.1016/j.jpcs.2021.109951
英文摘要	First principles were adopted to calculate the electronic structure and optical property of Sn heavily doped ZnSe, and the effects of different Sn doping ratios on the intermediate band structure of ZnSe were also investigated. The study results show that Sn heavily doped ZnSe can give rise to intermediate band structure, which is caused by interaction of all the Se-4s, Se-4p, Sn-5s, Sn-5p and Zn-5s orbitals. When the Sn doping ratio reaches 1/8, a diffused intermediate band structure is formed; and when Sn doping ratio reaches 1/4, ZnSe becomes a P typed semiconductor.
WOS研究方向	Chemistry ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000634934300015
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/148234]
专题	材料科学与工程学院
作者单位	1.Lanzhou Univ Technol, Sch Mat Sci & Engn, Lanzhou 730050, Peoples R China 2.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China;
推荐引用方式 GB/T 7714	Yin, Jianbo,Zhang, Xingxing. The Investigation of Sn heavily doped ZnSe for promising intermediate band materials[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2021,152.
APA	Yin, Jianbo,&Zhang, Xingxing.(2021).The Investigation of Sn heavily doped ZnSe for promising intermediate band materials.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,152.
MLA	Yin, Jianbo,et al."The Investigation of Sn heavily doped ZnSe for promising intermediate band materials".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 152(2021).