The Investigation of Sn heavily doped ZnSe for promising intermediate band materials | |
Yin, Jianbo1,2; Zhang, Xingxing1 | |
刊名 | JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
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2021 | |
卷号 | 152 |
关键词 | Zinc selenide Intermediate band Tin doping First principles |
ISSN号 | 0022-3697 |
DOI | 10.1016/j.jpcs.2021.109951 |
英文摘要 | First principles were adopted to calculate the electronic structure and optical property of Sn heavily doped ZnSe, and the effects of different Sn doping ratios on the intermediate band structure of ZnSe were also investigated. The study results show that Sn heavily doped ZnSe can give rise to intermediate band structure, which is caused by interaction of all the Se-4s, Se-4p, Sn-5s, Sn-5p and Zn-5s orbitals. When the Sn doping ratio reaches 1/8, a diffused intermediate band structure is formed; and when Sn doping ratio reaches 1/4, ZnSe becomes a P typed semiconductor. |
WOS研究方向 | Chemistry ; Physics |
语种 | 英语 |
出版者 | PERGAMON-ELSEVIER SCIENCE LTD |
WOS记录号 | WOS:000634934300015 |
内容类型 | 期刊论文 |
源URL | [http://ir.lut.edu.cn/handle/2XXMBERH/148234] ![]() |
专题 | 材料科学与工程学院 |
作者单位 | 1.Lanzhou Univ Technol, Sch Mat Sci & Engn, Lanzhou 730050, Peoples R China 2.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Peoples R China; |
推荐引用方式 GB/T 7714 | Yin, Jianbo,Zhang, Xingxing. The Investigation of Sn heavily doped ZnSe for promising intermediate band materials[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2021,152. |
APA | Yin, Jianbo,&Zhang, Xingxing.(2021).The Investigation of Sn heavily doped ZnSe for promising intermediate band materials.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,152. |
MLA | Yin, Jianbo,et al."The Investigation of Sn heavily doped ZnSe for promising intermediate band materials".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 152(2021). |
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