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Donor Halogenation Effects on Electronic Structures and Electron Process Rates of Donor/C-60 Heterojunction Interface: A Theoretical Study on FnZnPc (n=0, 4, 8, 16) and CI(n)SubPc (n=0, 6)
Bai, Rui-Rong1,2; Zhang, Cai-Rong1,2,3; Wu, You-Zhi1; Shen, Yu-Lin4; Liu, Zi-Jiang5; Chen, Hong-Shan3
刊名JOURNAL OF PHYSICAL CHEMISTRY A
2019-05-09
卷号123期号:18页码:4034-4047
ISSN号1089-5639
DOI10.1021/acs.jpca.9b01937
英文摘要Molecular engineering is significantly important for developing electron donor and acceptor materials of active layers in organic photovoltaics (OPVs). The OPVs based on halogenated donors frequently produced high power conversion efficiencies. Here, based upon density functional theory calculations with optimally tuned range separation parameters and solid polarization effects, we studied the effects of donor halogenation on molecular geometries, electronic structures, excitation, and spectroscopic properties for FnZnPc (n = 0, 4, 8, 16) and Cl(n)SubPc (n = 0, 6) monomers and the complexes with C-60 as well as the photoinduced direct charge transfer (CT), exciton dissociation (ED), and charge recombination (CR) processes that were described by rate constants calculated using Marcus theory. The tiny differences of the molecular orbital energy gap, excitation, and spectroscopic properties of FnZnPc (n = 0, 4, 8, 16) and Cl(n)SubPc (n = 0, 6) monomers suggest that halogenation cannot effectively tune the electronic and optical gap but the significant decrease of molecular orbital energies support the idea that halogenation has a remarkable influence on the energy level alignment at heterojunction interfaces. The halogenation also enhances intermolecular binding energies between C-60 and donors and increases the CT excitation energies of donor/C-60 complexes, which are favorable for improving open circuit voltage. Furthermore, for FnZnPc/C-60 (n = 0, 4, 8, 16) and SubPc/C-60 (n = 0, 6) complexes, the CR rates dramatically decrease (several orders) with increasing number of halogen atoms (except for F16ZnPc/C-60), meaning suppression of CR processes by halogenation. As for the special case of F16ZnPc/C-60, it underlines the importance of fluorination degree in molecular design of donor materials. This study provides a theoretical understanding of the halogenation effects of donors in OPVs and may be helpful in molecular design for electron donor materials.
资助项目National Natural Science Foundation of China[11164016]
WOS研究方向Chemistry ; Physics
语种英语
出版者AMER CHEMICAL SOC
WOS记录号WOS:000467780800012
状态已发表
内容类型期刊论文
源URL[http://119.78.100.223/handle/2XXMBERH/31868]  
专题理学院
材料科学与工程学院
省部共建有色金属先进加工与再利用国家重点实验室
通讯作者Zhang, Cai-Rong
作者单位1.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Lanzhou 730050, Gansu, Peoples R China
2.Lanzhou Univ Technol, Dept Appl Phys, Lanzhou 730050, Gansu, Peoples R China
3.Northwest Normal Univ, Coll Phys & Elect Engn, Lanzhou 730070, Gansu, Peoples R China
4.Gansu Comp Ctr, Lanzhou 730000, Gansu, Peoples R China
5.Lanzhou City Univ, Dept Phys, Lanzhou 730070, Gansu, Peoples R China
推荐引用方式
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Bai, Rui-Rong,Zhang, Cai-Rong,Wu, You-Zhi,et al. Donor Halogenation Effects on Electronic Structures and Electron Process Rates of Donor/C-60 Heterojunction Interface: A Theoretical Study on FnZnPc (n=0, 4, 8, 16) and CI(n)SubPc (n=0, 6)[J]. JOURNAL OF PHYSICAL CHEMISTRY A,2019,123(18):4034-4047.
APA Bai, Rui-Rong,Zhang, Cai-Rong,Wu, You-Zhi,Shen, Yu-Lin,Liu, Zi-Jiang,&Chen, Hong-Shan.(2019).Donor Halogenation Effects on Electronic Structures and Electron Process Rates of Donor/C-60 Heterojunction Interface: A Theoretical Study on FnZnPc (n=0, 4, 8, 16) and CI(n)SubPc (n=0, 6).JOURNAL OF PHYSICAL CHEMISTRY A,123(18),4034-4047.
MLA Bai, Rui-Rong,et al."Donor Halogenation Effects on Electronic Structures and Electron Process Rates of Donor/C-60 Heterojunction Interface: A Theoretical Study on FnZnPc (n=0, 4, 8, 16) and CI(n)SubPc (n=0, 6)".JOURNAL OF PHYSICAL CHEMISTRY A 123.18(2019):4034-4047.
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