Effects of defect states on the performance of CuInGaSe2 solar cells

doi:10.1088/1674-4926/35/2/024011

	Effects of defect states on the performance of CuInGaSe2 solar cells
	Wan, Fucheng 1; Tang, Fuling 1,2; Xue, Hongtao 1; Lu, Wenjiang 1,2; Feng, Yudong 2; Rui, Zhiyuan 1
刊名	Journal of Semiconductors
	2014-02-01
卷号	35 期号:2
关键词	Cadmium sulfide Conversion efficiency Energy gap Open circuit voltage Solar cells Defect state Defect state density Device modeling Effects of temperature Optimal performance Performance parameters Photo-electric conversion efficiency Thin film solar cells
ISSN号	16744926
DOI	10.1088/1674-4926/35/2/024011
英文摘要	Device modeling has been carried out to investigate the effects of defect states on the performance of ideal CuInGaSe2 (CIGS) thin film solar cells theoretically. The varieties of defect states (location in the band gap and densities) in absorption layer CIGS and in buffer layer CdS were examined. The performance parameters: open-circuit voltage, short-circuit current, fill factor, and photoelectric conversion efficiency for different defect states were quantitatively analyzed. We found that defect states always harm the performance of CIGS solar cells, but when defect state density is less than 1014 cm-3 in CIGS or less than 1018 cm -3 in CdS, defect states have little effect on the performances. When defect states are located in the middle of the band gap, they are more harmful. The effects of temperature and thickness are also considered. We found that CIGS solar cells have optimal performance at about 170 K and 2 μm of CIGS is enough for solar light absorption. © 2014 Chinese Institute of Electronics.
WOS研究方向	Physics
语种	英语
出版者	IOS Press, Nieuwe Hemweg 6B, Amsterdam, 1013 BG, Netherlands
WOS记录号	WOS:000217264300014
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/150428]
专题	材料科学与工程学院兰州理工大学省部共建有色金属先进加工与再利用国家重点实验室
作者单位	1.State Key Laboratory of Gansu Advanced Non-ferrous Metal Materials, Department of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou 730050, China; 2.Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China
推荐引用方式 GB/T 7714	Wan, Fucheng,Tang, Fuling,Xue, Hongtao,et al. Effects of defect states on the performance of CuInGaSe2 solar cells[J]. Journal of Semiconductors,2014,35(2).
APA	Wan, Fucheng,Tang, Fuling,Xue, Hongtao,Lu, Wenjiang,Feng, Yudong,&Rui, Zhiyuan.(2014).Effects of defect states on the performance of CuInGaSe2 solar cells.Journal of Semiconductors,35(2).
MLA	Wan, Fucheng,et al."Effects of defect states on the performance of CuInGaSe2 solar cells".Journal of Semiconductors 35.2(2014).