Influence of flexoelectric effects on domain switching in ferroelectric films

doi:10.1063/5.0048535

CORC > 兰州理工大学 > 兰州理工大学

	Influence of flexoelectric effects on domain switching in ferroelectric films
	Zou, M. J.1,2; Tang, Y. L.3; Feng, Y. P.1,2; Geng, W. R.1,2; Ma, X. L.3,4; Zhu, Y. L.1,3
刊名	JOURNAL OF APPLIED PHYSICS
	2021-05-14
卷号	129 期号:18
关键词	Electric fields Ferroelectric thin films Ferroelectricity High resolution transmission electron microscopy Lead metallography Lead titanate Nanotechnology Polarization Scanning electron microscopy Thin films Titanium compounds Antiphase domains Domain-switching process Ferroelectric domain switching Ferroelectric polarization Flexoelectric effects Negative pressures Piezoelectric force microscopy Scanning transmission electron microscopy
ISSN号	0021-8979
DOI	10.1063/5.0048535
英文摘要	Flexoelectricity has been shown to be an effective strategy to modulate the polarization configurations, domain structures, and physical properties in nanoscale ferroelectric thin films. However, the relations between the domain switching processes and flexoelectric effects remain elusive, which is essential for the design of nanoscale ferroelectric electric devices. In this work, strain-gradient and normal PbTiO3 films are fabricated and investigated to resolve this elusive relationship. By using large-scale and local piezoelectric force microscopy characterization, the ferroelectric domain switching in strain-gradient PbTiO3 films is found to be hard and hindered under applied electric fields compared with the normal ones. Successive atomic-scale scanning transmission electron microscopy imaging analysis manifests that the domains in the strain-gradient PbTiO3 films are stabilized by an additional effective strain gradient-induced flexoelectric field, which was introduced by negative pressure originated from vertically distributed Pb-rich anti-phase domains. This study proposes an effective method to stabilize the ferroelectric polarization in nanoscale ferroelectric films, thus facilitate improving the reliability of ferroelectric electronic devices.
WOS研究方向	Physics
语种	英语
出版者	AIP Publishing
WOS记录号	WOS:000692768700001
内容类型	期刊论文
源URL	[http://ir.lut.edu.cn/handle/2XXMBERH/148509]
专题	兰州理工大学
作者单位	1.Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China; 2.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China; 3.Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Wenhua Rd 72, Shenyang 110016, Peoples R China; 4.Lanzhou Univ Technol, State Key Lab Adv Proc & Recycling Nonferrous Met, Langongping Rd 287, Lanzhou 730050, Peoples R China
推荐引用方式 GB/T 7714	Zou, M. J.,Tang, Y. L.,Feng, Y. P.,et al. Influence of flexoelectric effects on domain switching in ferroelectric films[J]. JOURNAL OF APPLIED PHYSICS,2021,129(18).
APA	Zou, M. J.,Tang, Y. L.,Feng, Y. P.,Geng, W. R.,Ma, X. L.,&Zhu, Y. L..(2021).Influence of flexoelectric effects on domain switching in ferroelectric films.JOURNAL OF APPLIED PHYSICS,129(18).
MLA	Zou, M. J.,et al."Influence of flexoelectric effects on domain switching in ferroelectric films".JOURNAL OF APPLIED PHYSICS 129.18(2021).