Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride

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	Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride
	Wu JT(吴江涛); Wang BL(王宝林); Wei YJ(魏宇杰); Yang RG; Dresselhaus M; Wang BL(王宝林); Wu JT(吴江涛); Wei YJ(魏宇杰)
刊名	MATERIALS RESEARCH LETTERS
	2013-07-30
通讯作者邮箱	yujie_wei@lnm.imech.ac.cn
卷号	1 期号:4 页码:200-206
关键词	Hexagonal Boron-Nitride Anisotropic Strength Antisite Defects Mechanical Properties Band Gap
ISSN号	2166-3831
通讯作者	魏宇杰
产权排序	[Wu, Jiangtao; Wang, Baolin; Wei, Yujie] LNM, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China; [Yang, Ronggui] Department of Mechanical Engineering, University of Colorado, Boulder, CO 80309, USA;[Dresselhaus, Mildred] Departments of Physics and Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
合作状况	国际
中文摘要	Current interest in two-dimensional materials extends from graphene to others systems such as single-layer hexagonal boron-nitride (h-BN), for the possibility of making heterogeneous structures. Here, we report mechanical properties of h-BN and its band structures tuned by straining by using the density functional theory calculations. Young’s modulus and bending rigidity for h-BN are isotropic; its failure strength and failure strain show strong anisotropy. A small fraction of antisite defects in h-BN can largely decrease its mechanical properties. We reveal that strain can tune single-layer h-BN from an insulator to a semiconductor.
学科主题	固体力学
资助信息	Y.W. acknowledges the support from Chinese Academy of Sciences (CAS), MOST 973 of China (Nr. 2012CB937500), and National Natural Science Foundation of China (NSFC) (11021262, 11272327). R. Y. acknowledges the support from AFOSR (Grant No. FA9550-11-1-0109). M. D. acknowledges the support of the Solid State Solar-Thermal Energy Conversion Center (S3TEC), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences under Award Number: DE-SC0001299/DE-FG02-09ER46577. All calculations are performed at the Supercomputing Center of CAS.
原文出处	http://www.tandfonline.com/doi/abs/10.1080/21663831.2013.824516
语种	英语
公开日期	2013-11-06
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/47510]
专题	力学研究所_非线性力学国家重点实验室
推荐引用方式 GB/T 7714	Wu JT,Wang BL,Wei YJ,et al. Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride[J]. MATERIALS RESEARCH LETTERS,2013,1(4):200-206.
APA	吴江涛.,王宝林.,魏宇杰.,Yang RG.,Dresselhaus M.,...&Wei YJ.(2013).Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride.MATERIALS RESEARCH LETTERS,1(4),200-206.
MLA	吴江涛,et al."Mechanics and Mechanically Tunable Band Gap in Single-Layer Hexagonal Boron-Nitride".MATERIALS RESEARCH LETTERS 1.4(2013):200-206.