Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 光电子学研究室

	Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition
	Yan Jun-Feng 1; Wang Tao2 ; Wang Jing-Wei 2; Zhang Zhi-Yong 1; Zhao Wu 1,2
刊名	chinese physics b
	2009
卷号	18 期号:1 页码:320-323
关键词	metalorganic chemical vapour deposition (MOCVD) antimonides semiconducting indium compounds
合作状况	国内
英文摘要	low pressure metalorganic chemical vapour deposition (lp-mocvd) growth and characteristics of inassb on (100) gasb substrates are investigated. mirror-like surfaces with a minimum lattice mismatch are obtained. the samples are studied by photoluminescence spectra, and the output is 3.17 mu m in wavelength. the surface of inassb epilayer shows that its morphological feature is dependent on buffer layer. with an inas buffer layer used, the best surface is obtained. the inassb film shows to be of n-type conduction with an electron concentration of 8.52 x 10(16) cm(-3).
WOS标题词	science & technology ; physical sciences
类目[WOS]	physics, multidisciplinary
研究领域[WOS]	physics
关键词[WOS]	mu-m ; gasb ; temperature ; gainassb ; mocvd
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000262494700052
公开日期	2010-01-12
内容类型	期刊论文
源URL	[http://ir.opt.ac.cn/handle/181661/5352]
专题	西安光学精密机械研究所_光电子学研究室
作者单位	1.Northwestern Univ, Sch Informat Sci & Technol, Xian 710069, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Xian 710068, Peoples R China
推荐引用方式 GB/T 7714	Yan Jun-Feng,Wang Tao,Wang Jing-Wei,et al. Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition[J]. chinese physics b,2009,18(1):320-323.
APA	Yan Jun-Feng,Wang Tao,Wang Jing-Wei,Zhang Zhi-Yong,&Zhao Wu.(2009).Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition.chinese physics b,18(1),320-323.
MLA	Yan Jun-Feng,et al."Growth and characterization of InAsSb alloys by metalorganic chemical vapour deposition".chinese physics b 18.1(2009):320-323.