On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)

doi:10.1088/1367-2630/ac2bd6

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	On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)
	P. Steindl; E. M. Sala; B. Alen; D. Bimberg and P. Klenovsky
刊名	New Journal of Physics
	2021
卷号	23 期号:10 页码:16
ISSN号	1367-2630
DOI	10.1088/1367-2630/ac2bd6
英文摘要	Understanding the carrier dynamics of nanostructures is the key for development and optimization of novel semiconductor nano-devices. Here, we study the optical properties and carrier dynamics of (InGa)(AsSb)/GaAs/GaP quantum dots (QDs) by means of non-resonant energy and time-resolved photoluminescence depending on temperature. Studying this material system is fundamental in view of the ongoing implementation of such QDs for nano memory devices. The structures studied in this work include a single QD layer, QDs overgrown by a GaSb capping layer, and solely a GaAs quantum well, respectively. Theoretical analytical models allow to discern the common spectral features around the emission energy of 1.8 eV related to the GaAs quantum well and the GaP substrate. We observe type-I emission from QDs with recombination times between 2 ns and 10 ns, increasing towards lower energies. Moreover, based on the considerable tunability of the QDs depending on Sb incorporation, we suggest their utilization as quantum photonic sources embedded in complementary metal-oxide-semiconductor platforms, due to the feasibility of a nearly defect-free growth of GaP on Si. Finally, our analysis confirms the nature of the pumping power blue-shift of emission originating from the charged-background induced changes of the wavefunction spatial distribution.
URL标识	查看原文
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/65479]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	P. Steindl,E. M. Sala,B. Alen,et al. On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)[J]. New Journal of Physics,2021,23(10):16.
APA	P. Steindl,E. M. Sala,B. Alen,&D. Bimberg and P. Klenovsky.(2021).On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001).New Journal of Physics,23(10),16.
MLA	P. Steindl,et al."On the importance of antimony for temporal evolution of emission from self-assembled (InGa) (AsSb)/GaAs quantum dots on GaP(001)".New Journal of Physics 23.10(2021):16.