Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system
G. H. Tang,F. Yan and X. L. Chen
刊名Materials Science in Semiconductor Processing
2020
卷号118页码:5
ISSN号1369-8001
DOI10.1016/j.mssp.2020.105210
英文摘要At present, most of the III -V semiconductor photocathodes, such as GaAs, GaN and AlGaN photocathodes are activated by Cs/O at room temperature. In order to analyze the influence of different activation conditions on the performance of AlGaN photocathode, and investigate the mechanism of surface activation, five AlGaN photo-cathodes were activated with different conditions in an ultra-high vacuum system under a pressure of 10(-8) Pa. Three samples were activated by Cs/O under different temperatures at room temperature (about 25 degrees C), high temperature (about 60 degrees C) and low temperature (about-50 degrees C), respectively. One sample was activated by Rb/O at room temperature. Besides, one more sample was activated by Cs/O at room temperature to study the stability of AlGaN photocathode after activation. The results show that the performance of AlGaN photocathode could be affected greatly by activation conditions, and the mechanism was analyzed. The effect of excessive Cs treatment after activation on the stability of AlGaN photocathode was studied.
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语种英语
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/64841]  
专题中国科学院长春光学精密机械与物理研究所
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G. H. Tang,F. Yan and X. L. Chen. Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system[J]. Materials Science in Semiconductor Processing,2020,118:5.
APA G. H. Tang,F. Yan and X. L. Chen.(2020).Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system.Materials Science in Semiconductor Processing,118,5.
MLA G. H. Tang,F. Yan and X. L. Chen."Research on activation mechanism of AlGaN photocathodes in an ultra-high vacuum system".Materials Science in Semiconductor Processing 118(2020):5.
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