Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures

doi:10.1088/1361-6528/ab6676

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures
	L. B. Li,Y. Zang,S. G. Lin,J. C. Hu,Y. L. Han,Q. Chu,Q. Q. Lei and H. Chen
刊名	Nanotechnology
	2020
卷号	31 期号:14 页码:5
ISSN号	0957-4484
DOI	10.1088/1361-6528/ab6676
英文摘要	To widen the detection wavelength range and improve the detection sensitivity of SiC-based optoelectronic devices, the SiC/Ge/graphene heterojunction was fabricated by using wet transfer of the graphene following chemical vapor deposition. The Ge films on 4H-SiC(0001) have polycrystalline structure with nano-wire (NWs) and submicron spherical island (SIs) features. Due to the distinct light trapping effect of the Ge NWs, the SiC/GeNWs/graphene heterojunction has an absorbance of more than 90% in the 500-1600 nm range, which is higher than the SiC/GeSIs/graphene heterojunction. And the SiC/GeNWs/graphene heterojunction photodetector exhibits rectification ratio up to 25 at 2 V and stable photoresponse to the NIR light at zero voltage bias.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/64515]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	L. B. Li,Y. Zang,S. G. Lin,J. C. Hu,Y. L. Han,Q. Chu,Q. Q. Lei and H. Chen. Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures[J]. Nanotechnology,2020,31(14):5.
APA	L. B. Li,Y. Zang,S. G. Lin,J. C. Hu,Y. L. Han,Q. Chu,Q. Q. Lei and H. Chen.(2020).Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures.Nanotechnology,31(14),5.
MLA	L. B. Li,Y. Zang,S. G. Lin,J. C. Hu,Y. L. Han,Q. Chu,Q. Q. Lei and H. Chen."Fabrication and characterization of SiC/Ge/graphene heterojunction with Ge micro-nano structures".Nanotechnology 31.14(2020):5.