The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution | |
C. L. Zhu,Q. B. Jiao,X. Tan,H. Hu and Bayanheshig | |
刊名 | Chemical Physics |
2020 | |
卷号 | 529页码:4 |
ISSN号 | 0301-0104 |
DOI | 10.1016/j.chemphys.2019.110397 |
英文摘要 | High aspect ratio gratings (HARG) can be obtained by anisotropic etching of Si <1 1 0>/<1 1 1>. Usually isopropyl alcohol (IPA) is added to the solution in order to smooth Si <1 1 0> surface. However, the addition of IPA can reduce the etching rate ratio of Si <1 1 0>/<1 1 1>, which leads to a reduction of grating's aspect ratio. The effects of another additive TMDD-PA (TMDD: IPA = 1: 1 in wt%) were discussed. The experimental data indicates that TMDD-PA behaves better than IPA when smoothing Si <1 1 0> surface, and etching rate ratio of Si <1 1 0>/<1 1 1> increases with the increasing concentration of TMDD-PA. Mechanism of IPA and TMDD-PA in etching were analyzed. Molecules of IPA and TMDD behave differently on Si surfaces, and they have different impacts on H2O molecules. |
URL标识 | 查看原文 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.ciomp.ac.cn/handle/181722/64481] |
专题 | 中国科学院长春光学精密机械与物理研究所 |
推荐引用方式 GB/T 7714 | C. L. Zhu,Q. B. Jiao,X. Tan,H. Hu and Bayanheshig. The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution[J]. Chemical Physics,2020,529:4. |
APA | C. L. Zhu,Q. B. Jiao,X. Tan,H. Hu and Bayanheshig.(2020).The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution.Chemical Physics,529,4. |
MLA | C. L. Zhu,Q. B. Jiao,X. Tan,H. Hu and Bayanheshig."The effects of TMDD-PA concentration on roughness of Si <1 1 0> and etching rate ratio of Si <1 1 0>/<1 1 1> in alkaline KOH solution".Chemical Physics 529(2020):4. |
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