High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes

doi:10.1007/s10854-018-8934-2

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes
	Han, W. Y.; Zhang, Z. W.; Li, Z. M.; Chen, Y. R.; Song, H.; Miao, G. Q.; Fan, F.; Chen, H. F.; Liu, Z.; Jiang, H.
刊名	Journal of Materials Science-Materials in Electronics
	2018
卷号	29 期号:11 页码:9077-9082
关键词	p-i-n photodetectors template films Engineering Materials Science Physics
ISSN号	0957-4522
DOI	10.1007/s10854-018-8934-2
英文摘要	A back-illuminated metal-insulator-semiconductor (MIS) structure AlGaN-based solar-blind ultraviolet photodiode is demonstrated for the purpose of overcoming the technical bottleneck caused by high Al content p-AlGaN in p-i-n structure. The device presents a peak responsivity of 0.115 A/W at 270 nm, corresponding to an external quantum efficiency (EQE) of 53% and an ultraviolet/visible rejection ratio of more than three orders of magnitude under zero-bias. Moreover, a response speed around 24 mu s and a peak responsivity of 0.154 A/W, corresponding to an EQE of 70.6% will be achieved at a reverse bias of 3 V. The excellent performances of the back-illuminated MIS photodetector can be attributed to the adoption of a thin n-AlGaN layer of Al content gradient which plays a role of completely relaxing the strain of light absorption layer and the introduction of a homogeneous n-AlGaN interlayer into light absorption region which redistributes its electric field in favor of the separation and transport of the photo-generated carriers.
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/61010]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Han, W. Y.,Zhang, Z. W.,Li, Z. M.,et al. High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes[J]. Journal of Materials Science-Materials in Electronics,2018,29(11):9077-9082.
APA	Han, W. Y..,Zhang, Z. W..,Li, Z. M..,Chen, Y. R..,Song, H..,...&Jiang, H..(2018).High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes.Journal of Materials Science-Materials in Electronics,29(11),9077-9082.
MLA	Han, W. Y.,et al."High performance back-illuminated MIS structure AlGaN solar-blind ultraviolet photodiodes".Journal of Materials Science-Materials in Electronics 29.11(2018):9077-9082.