Investigation of regime switching from mode locking to Q-switching in a 2 um  InGaSb GaAsSb quantum well laser

doi:10.1364/oe.26.008289

CORC > 长春光学精密机械与物理研究所 > 中国科学院长春光学精密机械与物理研究所

	Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser
	Li, X.; Wang, H.; Qiao, Z. L.; Guo, X.; Wang, W. J.; Ng, G. I.; Zhang, Y.; Xu, Y. Q.; Niu, Z. C.; Tong, C. Z.
刊名	Optics Express
	2018
卷号	26 期号:7 页码:8289-8295
关键词	saturable absorber dot lasers femtosecond sesams Optics
ISSN号	1094-4087
DOI	10.1364/oe.26.008289
英文摘要	A two-section InGaSb/AlGaAsSb single quantum well (SQW) laser emitting at 2 mu m is presented. By varying the absorber bias voltage with a fixed gain current at 130 mA, passive mode locking at similar to 18.40 GHz, Q-switched mode locking, and passive Q-switching are observed in this laser. In the Q-switched mode locking regimes, the Q-switched RF signal and mode locked RF signal coexist, and the Q-switched lasing and mode-locked lasing happen at different wavelengths. This is the first observation of these three pulsed working regimes in a GaSb-based diode laser. An analysis of the regime switching mechanism is given based on the interplay between the gain saturation and the saturable absorption. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/60705]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Li, X.,Wang, H.,Qiao, Z. L.,et al. Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser[J]. Optics Express,2018,26(7):8289-8295.
APA	Li, X..,Wang, H..,Qiao, Z. L..,Guo, X..,Wang, W. J..,...&Liu, C. Y..(2018).Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser.Optics Express,26(7),8289-8295.
MLA	Li, X.,et al."Investigation of regime switching from mode locking to Q-switching in a 2 um InGaSb GaAsSb quantum well laser".Optics Express 26.7(2018):8289-8295.