Defect Integration of Reduced Graphene Oxide based on Dielectrophoretic Assembly

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	Defect Integration of Reduced Graphene Oxide based on Dielectrophoretic Assembly
	Zhang Y(张嵛); Liu LQ(刘连庆); Wang YC(王越超); Dong ZL(董再励)
	2011
会议日期	August 15-18, 2011
会议地点	Portland, Oregon, USA
页码	1074-1079
英文摘要	The defect integration of Reduced Graphene Oxide (RGO) sheets based on dielectrophoretic (DEP) assembly has been experimentally studied in this paper. Then an Atomic Force Microscopy (AFM) based mechanical cutting method is firstly proposed to form line defects in RGO sheets. Based on these two methods, the experimental studies of the effect of line defects on RGO are explored. The electric transport measurement results show that the resistance of the defected RGO generally increases due to the Anderson localization, which provide a solid prove to the theoretical studies of the influence of defects on the electrical properties of RGO.
源文献作者	Nanotechnology Council - NANO
产权排序	1
会议录	2011 11th IEEE International Conference on Nanotechnology
会议录出版者	IEEE
会议录出版地	Piscataway, NJ
语种	英语
ISBN号	978-1-4577-1515-0
内容类型	会议论文
源URL	[http://ir.sia.cn/handle/173321/8625]
专题	沈阳自动化研究所_机器人学研究室
通讯作者	Liu LQ(刘连庆); Wang YC(王越超)
作者单位	1.Graduate School of Chinese Academy of Sciences, Beijing, 100001, China 2.State Key Laboratory of Robotics, Shenyang Institute of Automation Chinese Academy of Sciences, Shenyang, 110016, China
推荐引用方式 GB/T 7714	Zhang Y,Liu LQ,Wang YC,et al. Defect Integration of Reduced Graphene Oxide based on Dielectrophoretic Assembly[C]. 见:. Portland, Oregon, USA. August 15-18, 2011.