Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors | |
Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang | |
刊名 | Applied Physics Express |
2019 | |
卷号 | 12页码:034001 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/29410] |
专题 | 半导体研究所_半导体超晶格国家重点实验室 |
推荐引用方式 GB/T 7714 | Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang. Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors[J]. Applied Physics Express,2019,12:034001. |
APA | Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang.(2019).Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors.Applied Physics Express,12,034001. |
MLA | Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang."Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors".Applied Physics Express 12(2019):034001. |
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