Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors
Jixuan Wu ;   Xiaolei Ma ;   Jiezhi Chen ;   Xiangwei Jiang
刊名Applied Physics Express
2019
卷号12页码:034001
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/29410]  
专题半导体研究所_半导体超晶格国家重点实验室
推荐引用方式
GB/T 7714
Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang. Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors[J]. Applied Physics Express,2019,12:034001.
APA Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang.(2019).Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors.Applied Physics Express,12,034001.
MLA Jixuan Wu ; Xiaolei Ma ; Jiezhi Chen ; Xiangwei Jiang."Defects coupling impacts on mono-layer WSe 2 tunneling field-effect transistors".Applied Physics Express 12(2019):034001.
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