| Gate defined quantum dot realized in a single crystalline InSb nanosheet | |
| Jianhong Xue; Yuanjie Chen; Dong Pan; Ji-Yin Wang; Jianhua Zhao; Shaoyun Huang; H. Q. Xu | |
| 刊名 | Applied Physics Letters
 |
| 2019 | |
| 卷号 | 114页码:023108 |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29619]  |
| 专题 | 半导体研究所_半导体超晶格国家重点实验室 |
| 推荐引用方式 GB/T 7714 | Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu. Gate defined quantum dot realized in a single crystalline InSb nanosheet[J]. Applied Physics Letters,2019,114:023108. |
| APA | Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu.(2019).Gate defined quantum dot realized in a single crystalline InSb nanosheet.Applied Physics Letters,114,023108. |
| MLA | Jianhong Xue;Yuanjie Chen;Dong Pan;Ji-Yin Wang;Jianhua Zhao;Shaoyun Huang;H. Q. Xu."Gate defined quantum dot realized in a single crystalline InSb nanosheet".Applied Physics Letters 114(2019):023108. |
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